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SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VWM
PPPM
IFSM (uni-directional only)
TJ max.
5.0 V to 188 V
600 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
IFSM
TJ, TSTG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
UNI BI
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (µA) (3)
(+)SMBJ5.0
(+)SMBJ5.0A (5)
KD
KE
KD 6.40 7.82
KE 6.40 7.07
10
10
5.0
5.0
800
800
(+)SMBJ6.0
(+)SMBJ6.0A
(+)SMBJ6.5
(+)SMBJ6.5A
(+)SMBJ7.0
(+)SMBJ7.0A
(+)SMBJ7.5
KF KF 6.67 8.15
KG KG 6.67 7.37
KH AH 7.22 8.82
KK AK 7.22 7.98
KL KL 7.78 9.51
KM KM 7.78 8.60
KN AN 8.33 10.2
10
10
10
10
10
10
1.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
800
800
500
500
200
200
100
(+)SMBJ7.5A
(+)SMBJ8.0
(+)SMBJ8.0A
KP AP 8.33 9.21 1.0
KQ AQ 8.89 10.9 1.0
KR AR 8.89 9.83 1.0
7.5
8.0
8.0
100
50
50
(+)SMBJ8.5
(+)SMBJ8.5A
(+)SMBJ9.0
KS AS 9.44 11.5 1.0
KT AT 9.44 10.4 1.0
KU AU 10.0 12.2 1.0
8.5
8.5
9.0
20
20
10
(+)SMBJ9.0A
(+)SMBJ10
(+)SMBJ10A
(+)SMBJ11
KV AV 10.0 11.1
KW AW 11.1 13.6
KX AX 11.1 12.3
KY KY 12.2 14.9
1.0
1.0
1.0
1.0
9.0
10
10
11
10
5.0
5.0
5.0
(+)SMBJ11A
(+)SMBJ12
(+)SMBJ12A
(+)SMBJ13
(+)SMBJ13A
(+)SMBJ14
KZ KZ 12.2 13.5 1.0
LD BD 13.3 16.3 1.0
LE BE 13.3 14.7 1.0
LF LF 14.4 17.6 1.0
LG LG 14.4 15.9 1.0
LH BH 15.6 19.1 1.0
11
12
12
13
13
14
5.0
5.0
5.0
1.0
1.0
1.0
(+)SMBJ14A
(+)SMBJ15
(+)SMBJ15A
(+)SMBJ16
LK BK 15.6 17.2 1.0
LL BL 16.7 20.4 1.0
LM BM 16.7 18.5 1.0
LN LN 17.8 21.8 1.0
14
15
15
16
1.0
1.0
1.0
1.0
(+)SMBJ16A
(+)SMBJ17
(+)SMBJ17A
(+)SMBJ18
(+)SMBJ18A
(+)SMBJ20
LP LM 17.8 19.7 1.0
LQ LQ 18.9 23.1 1.0
LR LR 18.9 20.9 1.0
LS BS 20.0 24.4 1.0
LT BT 20.0 22.1 1.0
LU LU 22.2 27.1 1.0
16
17
17
18
18
20
1.0
1.0
1.0
1.0
1.0
1.0
(+)SMBJ20A
(+)SMBJ22
(+)SMBJ22A
(+)SMBJ24
(+)SMBJ24A
(+)SMBJ26
(+)SMBJ26A
(+)SMBJ28
(+)SMBJ28A
(+)SMBJ30
LV LV 22.2 24.5
LW BW 24.4 29.8
LX BX 24.4 26.9
LY BY 26.7 32.6
LZ BZ 26.7 29.5
MD CD 28.9 35.3
ME CE 28.9 31.9
MF MF 31.1 38.0
MG MG 31.1 34.4
MH CH 33.3 40.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
22
22
24
24
26
26
28
28
30
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(+)SMBJ30A
(+)SMBJ33
(+)SMBJ33A
(+)SMBJ36
(+)SMBJ36A
(+)SMBJ40
(+)SMBJ40A
MK CK 33.3 36.8
ML CL 36.7 44.9
MM CM 36.7 40.6
MN CN 40.0 48.9
MP CP 40.0 44.2
MQ CQ 44.4 54.3
MR CR 44.4 49.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
30
33
33
36
36
40
40
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
10.2
11.3
9.3
10.3
8.4
9.3
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
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For technical questions within your region, please contact one of the following: Document Number: 88392
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 04-Sep-07

No Preview Available !

SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
UNI BI
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (µA) (3)
(+)SMBJ43
(+)SMBJ43A
(+)SMBJ45
(+)SMBJ45A
(+)SMBJ48
(+)SMBJ48A
(+)SMBJ51
(+)SMBJ51A
(+)SMBJ54
(+)SMBJ54A
(+)SMBJ58
(+)SMBJ58A
(+)SMBJ60
(+)SMBJ60A
(+)SMBJ64
(+)SMBJ64A
(+)SMBJ70
(+)SMBJ70A
(+)SMBJ75
(+)SMBJ75A
(+)SMBJ78
(+)SMBJ78A
(+)SMBJ85
(+)SMBJ85A
(+)SMBJ90
(+)SMBJ90A
(+)SMBJ100
(+)SMBJ100A
(+)SMBJ110
(+)SMBJ110A
(+)SMBJ120
(+)SMBJ120A
(+)SMBJ130
(+)SMBJ130A
(+)SMBJ150
(+)SMBJ150A
(+)SMBJ160
(+)SMBJ160A
(+)SMBJ170
(+)SMBJ170A
MS CS 47.8 58.4
MT CT 47.8 52.8
MU MU 50.0 61.1
MV MV 50.0 55.3
MW MW 53.3 65.1
MX MX 53.3 58.9
MY MY 56.7 69.3
MZ MZ 56.7 62.7
ND ND 60.0 73.3
NE NE 60.0 66.3
NF NF 64.4 78.7
NG NG 64.4 71.2
NH NH 66.7 81.5
NK NK 66.7 73.7
NL NL 71.1 86.9
NM NM 71.1 78.6
NN NN 77.8 95.1
NP NP 77.8 86.0
NQ NQ 83.3 102
NR NR 83.3 92.1
NS NS 86.7 106
NT NT 86.7 95.8
NU NU 94.4 115
NV NV 94.4 104
NW NW 100 122
NX NX 100 111
NY NY 111 136
NZ NZ 111 123
PD PD 122 149
PE PE 122 135
PF PF 133 163
PG PG 133 147
PH PH 144 176
PK PK 144 159
PL PL 167 204
PM PM 167 185
PN PN 178 218
PP PP 178 197
PQ PQ 189 231
PR PR 189 209
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
SMBJ188
PT PT 209 255 1.0
188
1.0
SMBJ188A
PS PS 209 231 1.0
188
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
1.7
2.0
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
Notes:
(1) Pulse test: tp 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 50 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient (1)
RθJA
Typical thermal resistance, junction to lead
RθJL
Note:
(1) Mounted on minimum recommended pad layout
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMBJ5.0A-E3/52
0.096
52
SMBJ5.0A-E3/5B
SMBJ5.0AHE3/52 (1)
SMBJ5.0AHE3/5B (1)
0.096
0.096
0.096
5B
52
5B
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
100
Peak Value
IPPM
where the Peak Current
decays to 50 % of IPPM
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Figure 3. Pulse Waveform
4.0
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
6000
1000
Measured at
Zero Bias
100 VR, Measured at Stand-Off
Voltage VWM
10
1
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 100 200
VWM - Reverse Stand-Off Voltage (V)
Figure 4. Typical Junction Capacitance
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For technical questions within your region, please contact one of the following: Document Number: 88392
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 04-Sep-07

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SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
100 200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
0.001
0.01 0.1 1.0 10
tp - Pulse Duration (s)
100
1000
Figure 5. Typical Transient Thermal Impedance
10
1
10
Number of Cycles at 60 Hz
100
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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