CL1501-L.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 CL1501-L 데이타시트 다운로드

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Low Noise Amplifier
Product Features
• GaAs p-HEMT chip on board
• No matching circuit needed
• High Maximum input power(+25dBm)
• High IP3 & Low Noise
• Single Supply Voltage (+5V)
• Surface Mount Hybrid Type
• Tape & Reel Packaging
• Small Size, High Heatsink
• Alumina Substrate
• Pb Free / RoHS Standard
CL0901-L / CL1501-L
CL1801-L / CL2101-L
Applications
• 2G & 3G Repeater
• Base Station
• PCS, CDMA, W-CDMA
• GSM, DCS, UMTS
• WiMAX, Wibro, WLAN
• RF Sub-Systems
Package Type : CP-16A
Description
RFHIC’s LOW Noise Amplifier series are all hybrid LNA type products which includes all matching for the convenience of customers.
CL series are focused on giving lowest noise possible. The structure of the device is built with GaAs p-HEMT die attached on a
ceramic thick film substrate. The device is still smaller than the area one would use for the application notes all together. Depending on
the part number, one can use this in different frequency applications. All LNA hybrids are possible to have custom frequency & spec
without any additional NRE cost involved.
All RFHIC products are RoHS compliant.
Electrical Specifications
PARAMETER
UNIT
CL0901-L
Frequency Range
MHz
824 ~ 894
(Cellular)
890 ~ 960
(GSM)
Small Signal Gain (S21)
Gain Flatness
dB 19
dB 0.5
18
0.5
Input Return Loss (S11)
Output Return Loss (S22)
1dB Compression Point (P1dB)
Output 3rd Order Intercept Point
(OIP3) (TYP.)
dB
dB
dBm
dBm
-18
-10
14
27
-18
-10
14
27
Noise Figure (TYP.)
dB 0.5
0.5
DC Supply
Current (Vdc=+5V)
mA 65
65
Test Condition
Supply voltage = +5V, 50ohm System, Ta = 25
OIP3 is measured with two tones, at an output power of +0dBm/tone separated by 1MHz.
CL1501-L
1400 ~ 1600
16
0.5
-18
-10
15
27
0.7
45
CL1801-L
1700 ~ 2000
15.5
0.5
-18
-10
16
27
0.6
45
CL2101-L
1850 ~ 2200
14
1.0
-18
-10
16
27
0.7
45
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1/9
All specifications may change without notice
Version 6.3

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CL0901-L / CL1501-L
Low Noise Amplifier CL1801-L / CL2101-L
Absolute Maximum Ratings
PARAMETER
UNIT
RATING
Device Voltage
V
8
RF Input Power
dBm
25
Operating Temperature
-40 ~ 85
Storage Temperature
-50 ~ 125
Note
Operation of this device in excess of any one of these parameters may cause permanent damage.
Functional Diagram
REMARK
-
-
-
-
Application Circuit
ESD Protection
Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper
ESD control techniques should be used when handling these devices. Some of the precautions recommended are;
- Person at a workbench should be earthed via a wrist strap and a resistor.
- All mains-powered equipment should be connected to the mains via an earth-leakage switch.
- Equipment cases should be grounded.
- Relative humidity should be maintained between 40% and 50%.
- An ionizer is recommended.
- Keep static materials, such as plastic envelopes and plastic trays etc. away from the workbench.
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2/9
All specifications may change without notice
Version 6.3

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Low Noise Amplifier
S-Parameter
CL0901-L / CL1501-L
CL1801-L / CL2101-L
CL0901-L (Cellular)
OIP3
Noise Figure
P1dB
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
3/9
All specifications may change without notice
Version 6.3

No Preview Available !

Low Noise Amplifier
S-Parameter
CL0901-L / CL1501-L
CL1801-L / CL2101-L
CL0901-L (GSM)
OIP3
Noise Figure
P1dB
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
4/9
All specifications may change without notice
Version 6.3

No Preview Available !

Low Noise Amplifier
S-Parameter
CL0901-L / CL1501-L
CL1801-L / CL2101-L
CL1801-L (PCS)
OIP3
Noise Figure
P1dB
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
5/9
All specifications may change without notice
Version 6.3