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HFA15TB60/HFA15TB60-1
Vishay High Power Products
HFA15TB60
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
HFA15TB60-1
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
Base
cathode
2
13
Cathode Anode
TO-220AC
2
13
N/C Anode
TO-262
PRODUCT SUMMARY
VR
VF at 15 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr
dI(rec)M/dt
600 V
1.7 V
15 A
19 ns
150 °C
84 nC
188 A/µs
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 15 A continuous current, the
HFA15TB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
15
150
60
74
29
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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HFA15TB60/HFA15TB60-1
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 µA
600
IF = 15 A
-
Maximum forward voltage
VFM IF = 30 A
See fig. 1
-
IF = 15 A, TJ = 125 °C
-
Maximum reverse
leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
-
-
Junction capacitance
CT VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1 TJ = 25 °C
trr2 TJ = 125 °C
- 19
- 42
- 74
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/µs
VR = 200 V
- 4.0
- 6.5
- 84
- 241
Peak rate of fall of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
- 188
- 160
MAX.
-
60
120
6.0
10
180
600
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
RthJC
RthJA
RthCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and gerased
Weight
Mounting torque
Marking device
Case style TO-220AC
Case style TO-262
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
- 80 K/W
0.5 -
2.0 -
0.07 -
12
- (10)
HFA15TB60
HFA15TB60-1
g
oz.
kgf · cm
(lbf · in)
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93063
Revision: 30-Jul-08

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HFA15TB60/HFA15TB60-1
HEXFRED®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
10 000
1000
100
TJ = 150 °C
TJ = 125 °C
10
1 TJ = 25 °C
0.1
0.01
0
100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
100
TJ = 25 °C
10
1
0.1
0.01
0.00001
10
10
100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
P
DM
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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HFA15TB60/HFA15TB60-1
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
100
IF = 30 A
IF = 15 A
80 IF = 5 A
60
40
20 VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
800
700
VR = 200 V
TJ = 125 °C
TJ = 25 °C
600
500
IF = 30 A
400 IF = 15 A
IF = 5 A
300
200
100
0
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
25
VR = 200 V
TJ = 125 °C
20 TJ = 25 °C
15 IF = 30 A
IF = 15 A
10 IF = 5 A
5
0
100
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
10 000
IF = 30 A
IF = 15 A
IF = 5 A
1000
100
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93063
Revision: 30-Jul-08

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HFA15TB60/HFA15TB60-1
HEXFRED®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
VR = 200 V
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Dimensions
Part marking information
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95261
http://www.vishay.com/doc?95262
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5