KZT853.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 KZT853 데이타시트 다운로드

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SMD Type
Transistors
NPN Transistors
FZT853 (KZT853)
Features
Collector Current Capability IC=6A
Collector Emitter Voltage VCEO=100V
Complementary to FZT953
SOT-223
6.50±0.2
3.00±0.1
4
123
Unit:mm
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
200
100
6
6
10
3
150
-55 to 150
Unit
V
A
W
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SMD Type
Transistors
NPN Transistors
FZT853 (KZT853)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector-emitter breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current RB 1kΩ
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Turn On Voltage
DC current gain
(Note.1)
Switching Times
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCER IC=1mA, RB 1kΩ
VCEO Ic= 10 mAIB= 0
VEBO IE= 100μAIC= 0
ICBO
VCB= 200 V , IE= 0
VCB= 200 V , IE= 0 , Ta = 100
VCB= 200 V , IE= 0
ICER
VCB= 200 V , IE= 0 , Ta = 100
IEBO VEB= 6V , IC=0
IC=0.1 A, IB=5mA (Note.1)
IC=1 A, IB=50mA (Note.1)
VCE(sat)
IC=2 A, IB=50mA (Note.1)
IC=6 A, IB=300mA (Note.1)
VBE(sat) IC=6 A, IB=300mA (Note.1)
VBE(on) VCE= 6V, IC= 1A (Note.1)
hFE(1) VCE= 1V, IC= 10mA
hFE(2) VCE= 1V, IC= 2A
hFE(3) VCE= 1V, IC= 5A
hFE(4) VCE= 1V, IC= 10A
ton IC=1A, IB1=100mA
toff IB2=100mA, VCC=10V
Cob VCB= 10V, f=1MHz
fT VCE= 10V, IC= 100mA,f=50MHz
Note.1: Pulse width=300us. Duty cycle 2%
Min Typ Max Unit
200
200
V
100
6
0.1
1
0.1 uA
1
0.1
50
100
mV
170
375
1.2
V
1.15
100 300
100 300
75
25
45
1100
ns
45 pF
130 MHz
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