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NP50P04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0241EJ0100
Rev.1.00
Feb 09, 2011
Description
The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 25 A)
Low input capacitance
Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP50P04SLG-E1-AY 1
NP50P04SLG-E2-AY 1
Pure Sn (Tin)
Tape 2500 p/reel
Note: 1. Pb-free (This product does not contain Pb in external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
40
m20
m50
m150
84
1.2
175
55 to +175
37
136
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.78 °C/W
125 °C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 1 of 6

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NP50P04SLG
Electrical Characteristics (TA = 25°C)
Item
Symbol Min
Zero Gate Voltage Drain Current IDSS
Gate Leakage Current
IGSS
Gate to Source Threshold
VGS(th)
1.0
Voltage
Forward Transfer Admittance 1 | yfs |
12
Drain to Source On-state
Resistance 1
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage 1
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note: 1. Pulsed test PW 350 μs, Duty Cycle 2%
Typ
1.4
44
8.2
9.8
3800
740
500
11
15
250
150
100
13
30
0.96
50
63
Max
1
m10
2.5
9.6
15
5700
1120
905
24
39
505
380
150
1.5
Chapter Title
Unit
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 25 A
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 25 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 25 A,
VGS = 10 V,
RG = 0 Ω
VDD = 32 V,
VGS = 10 V,
ID = 50 A
IF = 50 A, VGS = 0 V
IF = 50 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 0 V
50 Ω
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
0 10%
VDS()
90%
VDS
VDS
Wave Form 0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 2 of 6

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NP50P04SLG
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
RD(VS(oGnS) =Lim1iit0edV)
ID(DC)
ID(pulse)
DC
Power Dissipation
Limited
PW = 100 μs
1 ms
-1 10 ms
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.78°C/W
1
0.1
0.01100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100 1000
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 3 of 6

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NP50P04SLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-200
-180
5.0 V
-160 VGS = 10 V
-140
-120
-100
-80
-60
-40
-20
-0
0 -1
4.5 V
Pulsed
-2 -3 -4
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4 Pulsed
VDS = VGS
-0.2 ID = 250 μA
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
18
16
14
12
10
8
6
4
2
0
-1
4.5 V
5.0 V
VGS = 10 V
Pulsed
-10
-100
-1000
ID - Drain Current - A
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = 10 V
Pulsed
-10
-1 100°C
-0.1 125°C
-0.01
-0.001
150°C
175°C
-0.0001
0 -0.5 -1
Tch = 55°C
25°C
25°C
75°C
-1.5 -2 -2.5 -3 -3.5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
10 Pulsed
Tch = −55°C
25°C
1
25°C
0.1 75°C
0.01
0.001
100°C
125°C
150°C
175°C
0.0001
0.0001 0.001 0.01
0.1
1
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
35
30
25
20
15
10
5 10 A
0
0 -5
25 A
ID = 50 A
Pulsed
-10 -15 -20 -25
VGS - Gate to Source Voltage - V
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NP50P04SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-75
VGS = 4.5 V
-25 25
10 V
75
ID = 25 A
Pulsed
125 175
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tr
10
VDD = 20 V
VGS = 10 V
RG = 0
1
-0.01
-0.1
tf
td(on)
-1 -10
ID - Drain Current - A
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-1000
-100
VGS = 10 V
-10
-1 5.0 V 4.5 V
-0.1
-0.01
0V
-0.001
-0.0001
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10.00
Ciss
1.00
Coss
Cr ss
VGS = 0 V
f = 1 MHz
0.10
-0.01
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-35
VDS
-30
-25
-20
-15
-10
VDD = 32 V
20 V
8 V
-15
-10
-5
-5
0
0
ID = 50 A
0
10 20 30 40 50 60 70 80 90 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
-0.1
VGS = 0 V
di/dt = 100 A/μs
-1 -10 -100
IF - Diode Forward Current - A
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