HY3306P.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 HY3306P 데이타시트 다운로드

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HY3306P/B
N-Channel Enhancement Mode MOSFET
Features
60V/130A
RDS(ON) = 5.4 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB
HY3306 HY3306
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY3306P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
60
±25
175
-55 to 175
130
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
500**
130
84
230
115
0.65
62.5
EAS Avalanche Energy, Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=48V
700***
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
HY3306
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=60V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=65 A
60
-
-
2.0
-
-
--
-1
- 10
3.0 4.0
- ±100
5.4 6.8
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD= 65 A, VGS=0V
ISD= 65A, dlSD/dt=100A/µs
-
-
-
0.8 1.2
30 -
52 -
Unit
V
µA
V
nA
m
V
ns
nC
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HY3306P/B
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=30V, RG=6 ,
I DS =65A, V GS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=48V, VGS=10V,
IDS=65A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
HY3306
Min. Typ. Max.
- 1.0 -
- 3318 -
- 621 -
- 229 -
- 28
-
- 18
-
- 42
-
- 54
-
- 67 -
- 14 -
- 19 -
Unit
pF
ns
nC
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HY3306P/B
Typical Operating Characteristics
Power Dissipation
275
250
200
Drain Current
187
175
limited by package
150
125
150 100
100
50
T =25oC
C
0
0 20 40 60 80 100 120 140 160 180 200
TC -Case Temperature (°C)
75
50
25
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160 180 200
TC -Case Temperature (°C)
Safe Operation Area
1000
100 Rds(on) Limit
100us
10ms
1
0.1
0.01
0.001
10
1
0.1
1ms
DC
1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
0.02
0.01
Single
Duty = 0.5
0.2
0.1
0.05
0.0001
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
4
400
Mounted on minimum pad
R : 62.5 oC/W
θJA
1
10
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HY3306P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
200
V = 5.5,6,7,8,9,10V
GS
175
150 5V
125
100
75 4.5V
50
4V
25
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
9.0
8.0
7.0
VGS=10V
6.0
5.0
4.0
3.0
2.0
0
40 80 120 160 200
ID- Drain Current (A)
Gate-Source On Resistance
14
IDS= 65A
12
10
8
6
4
2
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
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