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BC846 … BC850
NPN Silicon Epitaxial Transistor
for switching and amplifier applications
As complementary types the PNP transistors
BC856...BC860 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Emitter Base Voltage
BC846, BC847
BC848, BC849, BC850
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCBO
VCBO
VCEO
VCEO
VCEO
VEBO
VEBO
IC
ICM
Ptot
TJ
TS
Value
80
50
30
65
45
30
6
5
100
200
200
150
- 65 to + 150
Units
V
V
V
V
V
V
V
V
mA
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/06/2006

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BC846 … BC850
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 2 mA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
A
B
C
Base Emitter On Voltage
at IC = 2 mA, VCE = 5 V
at IC = 10 mA, VCE = 5 V
Collector Cutoff Current
at VCB = 30 V
Current Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Input Capacitance
at VEB = 0.5 V, f = 1 MHz
Noise Figure
at IC = 200 µA, VCE = 5 V, BC846, BC847, BC848
RG = 2 K, f = 1 KHz
BC849, BC850
at IC = 200 µA,VCE = 5 V,
BC849
RG = 2 K, f = 30 ~15 KHz BC850
Symbol
hFE
hFE
hFE
VCEsat
VCEsat
VBE(on)
VBE(on)
ICBO
fT
Cob
Cib
NF
NF
NF
NF
Min.
110
200
420
-
-
580
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
300
-
9
-
-
-
-
Max.
220
450
800
250
600
Units
-
-
-
mV
mV
700 mV
720 mV
15 nA
- MHz
6 pF
- pF
10 dB
4 dB
4 dB
3 dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/06/2006

No Preview Available !

BC846 … BC850
STATIC CHARACTERISTIC
100
I B=400 A
I B=350 A
80
I B=300 A
I B=250 A
60
I B=200 A
40 I B=150 A
I B=100 A
20
I B=50 A
0
4
8
12 16
20
VCE(V),COLLECTOR-EMITTER VOLTAGE
10000
DC CURRENT GAIN
VCE=5V
1000
BASE-EMITTER ON VOLTAGE
100
VCE=2V
10
1
0.1
0
0.2 0.4 0.6 0.8 1.0
VBE(V),BASE-EMITTER VOLTAGE
1.2
CURRENT GAIN BANDWIDTH PRODUCT
1000
VCE=5V
100
100 10
10
1 10 100 1000
I C(mA),COLLECTOR CURRENT
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10000
I C=10IB
1000
100
VBE(sat)
10
1
VCE(sat)
10
100 1000
I C(mA),COLLECTOR CURRENT
1
0.1
1 10 100
I C(mA),COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
100
f=1MHz
10
1
0.1
1
10 100 1000
VCB(V),COLLECTOR-BASE VOLTAGE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/06/2006