KN1A01FU.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 KN1A01FU 데이타시트 다운로드

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SMD Type
PNP Transistors
HN1A01FU (KN1A01FU )
Transistors
Features
High voltage and high current
High hFE: hFE = 120~400
Excellent hFE linearity
Small package (Dual type)
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
-50
-50
-5
-150
-30
200
125
-55 to 125
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCEO Ic= -1 mAIB=0
VEBO IE= -100μAIC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
hFE VCE= -6V, IC= -2mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IC= -1mA
Classification of hfe
Type
HN1A01FU-Y
Range
120-240
Marking
D1Y
HN1A01FU-G
200-400
D1G
Min Typ Max Unit
-50
-50 V
-5
-100
-100
nA
-0.3
V
-1.2
120 400
7 pF
80 MHz
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SMD Type
PNP Transistors
HN1A01FU (KN1A01FU )
Typical Characterisitics
Transistors
2 www.kexin.com.cn