FSBB15CH60D.pdf 데이터시트 (총 15 페이지) - 파일 다운로드 FSBB15CH60D 데이타시트 다운로드

No Preview Available !

August 2015
FSBB15CH60D
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
FSBB15CH60D is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
AN-9044 - Motion SPM® 3 Series Users Guide
General Description
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBB15CH60D
Device Marking
FSBB15CH60D
Package
SPMCC-027
Packing Type
Rail
Quantity
10
©2015 Fairchild Semiconductor Corporation
FSBB15CH60D Rev. 1.0
1
www.fairchildsemi.com

No Preview Available !

Integrated Power Functions
• 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 5 and 14.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2015 Fairchild Semiconductor Corporation
FSBB15CH60D Rev. 1.0
2
www.fairchildsemi.com

No Preview Available !

Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
VCC(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
VTS
CSC
IN(UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
NV
NW
U
V
W
P
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-Side U-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side W-Phase
Fault Output
Output for LVIC Temperature Sensing Voltage Output
Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
Signal Input for High-Side U-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for U-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
Signal Input for High-Side V-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-Side W-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for W-Phase IGBT Driving
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Output for U-Phase
Output for V-Phase
Output for W-Phase
Positive DC-Link Input
©2015 Fairchild Semiconductor Corporation
FSBB15CH60D Rev. 1.0
3
www.fairchildsemi.com

No Preview Available !

Internal Equivalent Circuit and Input/Output Pins
(1 9) VB ( W )
(1 8) VCC (H)
( 17) IN(WH )
(2 0) VS ( W )
(1 5) VB ( V)
(1 4) VCC (H)
(1 3) IN( VH)
(16) VS (V )
(1 1) VB ( U)
(1 0) VCC (H)
(9 ) IN( UH)
( 1 2) VS ( U)
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
P (27)
W (26)
V (25)
U (24)
(8) CS C
(7) VT S
(6) VF O
(5) IN(WL )
(4) IN(VL)
(3) IN(UL )
(2) COM
(1) VCC( L)
CSC
VTS
VFO
IN
IN
IN
COM
VCC
OUT
OUT
OUT
NW (23)
NV (22)
NU (21)
Figure 3. Internal Block Diagram
Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
©2015 Fairchild Semiconductor Corporation
FSBB15CH60D Rev. 1.0
4
www.fairchildsemi.com

No Preview Available !

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ 150°C (Note 4)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
450
500
600
15
30
58
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Applied between VCC(H), VCC(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
Rating
20
20
-0.3 ~ VCC+0.3
-0.3 ~ VCC+0.3
2
-0.3 ~ VCC+0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ 150°C (Note 4)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-repetitive, < 2 s
See Figure 2
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 5)
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ.
-
-
Max.
2.15
2.85
Unit
°C / W
°C / W
©2015 Fairchild Semiconductor Corporation
FSBB15CH60D Rev. 1.0
5
www.fairchildsemi.com