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August 2015
FSBB20CH60D
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
FSBB20CH60D is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
AN-9044 - Motion SPM® 3 Series Users Guide
General Description
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBB20CH60D
Device Marking
FSBB20CH60D
Package
SPMCC-027
Packing Type
Rail
Quantity
10
©2015 Fairchild Semiconductor Corporation
FSBB20CH60D Rev. 1.0
1
www.fairchildsemi.com

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Integrated Power Functions
• 600 V - 20 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 5 and 14.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2015 Fairchild Semiconductor Corporation
FSBB20CH60D Rev. 1.0
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www.fairchildsemi.com

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Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
VCC(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
VTS
CSC
IN(UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
NV
NW
U
V
W
P
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-Side U-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side W-Phase
Fault Output
Output for LVIC Temperature Sensing Voltage Output
Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
Signal Input for High-Side U-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for U-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
Signal Input for High-Side V-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-Side W-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for W-Phase IGBT Driving
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Output for U-Phase
Output for V-Phase
Output for W-Phase
Positive DC-Link Input
©2015 Fairchild Semiconductor Corporation
FSBB20CH60D Rev. 1.0
3
www.fairchildsemi.com