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FPD6836P70
Low-Noise
High-Fre-
quency Pack-
aged pHEMT
FPD6836P70
LOW-NOISE HIGH-FREQUENCY PACKAGED
pHEMT
Package: P70
Product Description
The FPD6836P70 is a low parasitic, surface mountable packaged deple-
tion mode pseudomorphic High Electron Mobility Transistor (pHEMT) opti-
mised for low-noise, high-frequency applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ 22dBm Output Power (P1dB)
„ 15dB Gain at 5.8GHz
„ 0.8dB Noise Figure at
5.8 GHz
„ 32dB Output IP3 at 5.8GHz
„ 45% Power-Added Efficiency
at 5.8GHz
„ Usable Gain to 18GHz
Applications
„ Gain blocks and medium
power stages
„ WiMax (2GHz to 11GHz)
„ WLAN 802.11a (5.8GHz)
„ Point-to-Point Radio (to
18 GHz)
Parameter
Specification
Min. Typ. Max.
Unit
P1dB at Gain Compression
Small-Signal Gain (SSG)
22
14 16
dBm
dB
PAE 45 %
Maximum Stable Gain (|S21/S12|)
15
12
Noise Figure (NF)
0.8 dB
OIP3
Saturated Drain-Source Current (IDSS)
Maximum Drain-Source Current
(IMAX)
Transconductance (GM)
90
32 dBm
105 135 mA
215 mA
140 ms
Gate-Source Leakage Current (IGSO)
1 10 μA
Pinch-Off Voltage (VP)
|0.7|
|1.0|
|1.3|
V
Gate-Source Breakdown Voltage
(VBDGS)
|12|
|14|
V
Gate-Drain Breakdown Voltage
(VBDGD)
|14.5|
|16|
V
Thermal Resistivity (θJC) *
275 °C/W
*Note: TAMBIENT=22°C, RF specification measured at f=5.8GHz using CW signal (except as noted).
Condition
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA, POUT=P1dB
VDS=5V, IDS=55mA, f=12GHz
VDS=5V, IDS=55mA, f=18GHz
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA, POUT=10dBm SCL
VDS=1.3V, VGS=0V
VDS=1.3V, VGS=+1V
VDS=1.3V, VGS=0V
VGS = -5 V
VDS=1.3V, IDS=0.2mA
IGS = 0.36 mA
IGD = 0.36 mA
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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FPD6836P70
Absolute Maximum Ratings1
Parameter
Rating
Unit
Drain-Source Voltage (VDS)
(-3 V < VGS < 0 V)
Gate-Source Voltage (VGS)
(0V < VDS < +8V)
Drain-Source Current (IDS)
(For VDS<2V)
Gate Current (IG)
(Forward or reverse)
8V
-3 V
IDSS
10 mA
RF Input Power (PIN)2
(Under any acceptable bias state)
16
dBm
Channel Operating Temperature (TCH)
(Under any acceptable bias state)
175
°C
Storage Temperature (TSTG)
(Non-Operating Storage)
-40 to 150
°C
Total Power Dissipation (PTOT)3, 4, 5
Simultaneous Combination of Limits6
(2 or more max. limits)
550
80
mW
%
Notes:
1TAMBIENT=22°C unless otherwise noted; exceeding any one of these absolute max-
imum ratings may cause permanent damage to the device.
2Max. RF input limit must be further limited if input VSWR>2.5:1.
3Users should avoid exceeding 80% of 2 or more Limits simultaneously.
4Total Power Dissipation (PTOT) defined as (PDC+PIN)–POUT, where PDC: DC Bias
Power, PIN: RF Input Power, POUT: RF Output Power.
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT=550mW-(1/RθJC)xTPACK, where TPACK=source tab lead temperature
above 22°C.
Example: For a 65°C carrier temperature: PTOT=550mW-(3.6x(65-22))=323mW
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Biasing Guidelines
Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger num-
ber of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is
applied before drain bias, otherwise the pHEMT may be induced to self-oscillate.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode
devices such as the FPD6836P70.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the
onset of compression is normal for this operating point. Class AB bias of 25% to 33% of IDSS offers an optimized solution for
NF and OIP3.
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FPD6836P70
Typical Frequency Response
FPD6836P7 0 Bia sed @ VD = 5V ID = 55mA
30
MS G
25 S21
20
15
10
5
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 1 5 16 17 18 19 20 21 22
Frequency (GHz)
FPD6836P70 Bias VD= 5V, ID= 50mA
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
123
4567
0
8 9 10 11 12 13 14 15 16 17 18
Frequency(GHz)
Note: Tuned noise figure variation against frequency is shown above. The devices were biased nominally at VDS=5V,
IDS=50mA. The test devices were tuned for minimum noise figure and maximum gain using tuners at the device input and out-
put ports.
Typical RF Performance
Power Transfer Characteristics
VDS = 5V, IDS = 55mA at f = 5.8GHz
23.0
Pout (dBm)
Comp Point
21.0
4.00
3.50
3.00
19.0 2.50
17.0 2.00
1.50
15.0
1.00
13.0
0.50
11.0 0.00
9.0 -0.50
-3 -1 1 3
5 7 9 11 13
I nput Power (dBm)
70 .0%
60 .0%
50 .0%
40 .0%
30 .0%
20 .0%
10 .0%
0 .0%
-3
PAE
-1 1
Drain Efficiency and PAE
E ff.
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
35
7
I nput Power (dBm)
10.0%
0.0%
9 11 13
Typi cal Intermodulati on Performance
VDS = 5V, I DS = 55mA at f = 5.8GHz
12
Pout (dBm)
3rds (dBc)
10
8
6
4
-38. 00
-43. 00
-48. 00
-53. 00
2 -58. 00
-10.3 -9.3 -8.3 -7.4 -6.3 -5.3 -4.4 -3.4 -2.4
Inpur Power (dBm)
Note: Typical Power, efficiency, and intermodulation is shown above. The devices were biased nominally at VDS=5V, IDS=55mA
at a test frequency of 5.8GHz. The test devices were tuned using slide tuners at the input and the output ports of the device.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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FPD6836P70
Temperature Response
FPD 68 36P7 0 Gai n & Pow er Va riat ion ove r Te m pera tu re
V D S = 5 .0 V ID S = 55m A a t f = 5 .8 GHz
  FPD6 83 6P70 I nterm od u lati on Va riat ion ove r Te m pera tu re
V DS = 5.0V IDS = 5 5m A at f = 5.8GH z
1 9.00
22 .0 0
1 8.00
21 .0 0
20 .0 0
1 7.00
19 .0 0
18 .0 0
17 .0 0
1 6.00
1 5.00
SSG P1dB
16 .0 0
15 .0 0
14 .0 0
13 .0 0
1 4.00
12 .0 0
-40 - 20 0 2 0 40 6 0 80
Temperature (C)
- 30.0 0
- 35.0 0
- 40.0 0
- 45.0 0
- 50.0 0
-4 0
-20
IM 3
0 20 40
Temperature (C)
60
80
Note: Typical power, gain, and intermodulation variation over temperature is shown above. The devices were biased nominally
at VDS=5V, IDS=55mA at a test frequency of 5.8GHz on eval board. The evaluation board is tuned for minimum noise and
maximum gain. The 1dB compression point is lower than the typical number due to the change in matching.
Freq
(GHz)
0.800
0.900
1.000
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.300
3.500
3.700
4.000
4.500
4.900
5.100
5.300
5.500
5.700
5.900
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
18.000
Noise Parameters
Biased at 5V, 50mA
F(min)
(dB)
0.22
0.25
0.28
0.36
0.39
0.41
0.44
0.46
0.48
0.49
0.52
0.55
0.56
0.60
0.65
0.68
0.72
0.74
0.76
0.78
0.81
0.92
1.02
1.13
1.24
1.34
1.45
1.55
1.66
1.77
2.09
ΓOpt
Mag
0.752
0.747
0.741
0.696
0.684
0.671
0.659
0.646
0.633
0.619
0.599
0.584
0.570
0.548
0.510
0.478
0.462
0.445
0.428
0.411
0.394
0.279
0.198
0.127
0.146
0.152
0.233
0.312
0.392
0.535
0.948
ΓOpt
Angle
13.7
15.1
16.6
28.4
31.4
34.5
37.6
40.7
43.9
47.1
51.9
55.1
58.4
63.4
71.8
78.7
82.2
85.7
89.2
92.8
96.4
118.1
147.4
-175.9
-136.3
-90.8
-71.2
-50.7
-46.8
-28.5
83.1
Normalized
Rn (Z0=50)
0.227
0.221
0.216
0.180
0.173
0.166
0.160
0.155
0.150
0.146
0.140
0.136
0.133
0.129
0.123
0.119
0.117
0.115
0.114
0.112
0.111
0.095
0.097
0.117
0.128
0.171
0.211
0.317
0.400
0.526
0.655  
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FPD6836P70
Parameter
Gain
P1dB
IP3
NF
S11
S22
VD
VG
ID
Reference Design (2.6GHz)
Typical
20
17
30
0.65
-4
-12
3
-0.4 to -0.6
50
Unit
dB
dBm
dBm
dB
V
V
mA
OIP3 measured at POUT of 6dBm per tone.
Evaluation Board Layout
Vg Vd
15pF
0.01uF
0.01uF
15pF
1. 0u F
P1 P2
15pF C1
L1
Q1
L2
C2
15pF
Component
Lg, Ld
L1
L2
C1, C2
15 pF x 4
0.01 µF x 4
1.0 µF
R1
P1, P2
Value
15 nH
2.2 nH
1.5 nH
0.5 pF
15 pF
0.01 µF
1.0 µF
20 Ω
Description
LQW18AN Murata chip inductor
LL1005FHL Toko chip inductor
LL1005FHL Toko chip inductor
ATC 600S Chip Capacitor
ATC 600S Chip Capacitor
ATC 0805X7R Chip Capacitor
B-Case Tantallum Chip Capacitor
0402 size chip resistor (100mW)
PCB Edge mount RF connector
Evaluation board material: 31mil thick FR4 with 1/2 ounce
Cu on both sides.
FPD6836P70 EVAL Board -Vg
Sc he mat ic
0.01uF
@ 2.6GHz
15pF
Vd
20 Ohm
15pF
RF IN
C1
15 nH 15 nH
L1
1.0uF
0. 01 u F
15pF
L2
C2
15pF
R F OU T
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD a(t+((1++)113))333633-666-7-66877-858-5-5575507700osraslseaaslle-esssu--spsupupopprpoto@rrtrt@f@mrrfdfmm.cddo.c.mcoomm.
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