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HI-SINCERITY
MICROELECTRONICS CORP.
H01N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
1A, 600V, RDS(on)=8@VGS=10V
Low Gate Charge 15nC(Typ.)
Low Crss 4pF(Typ.)
Fast Switching
Improved dv/dt Capability
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current (Continuous TC=25oC)
Drain Current (Continuous TC=100oC)
Drain Current (Pulsed) *1
Gate-Source Voltage
Single Pulse Avalanche Energy
(L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25°C)
Avalanche Current *1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt *2
Total Power Dissipation (TA=25oC)
PD Total Power Dissipation (TC=25oC)
Derate above 25°C
Tj, Tstg
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: ISD1.1A, di/dt200A/us, VDDBVDSS, Starting TJ=25oC
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 1/5
H01N60 Series Pin Assignment
Tab
3
2
1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Tab 3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
3
2
1
Pin 3: Source
D
H01N60 Series
Symbol:
G
S
H01N60I / H01N60J
600
1
0.6
4
±30
50
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/nS
W
W
W/°C
°C
°C
H01N60I, H01N60J
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 2/5
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
4.5
110
Units
°C/W
°C/W
ELectrical Characteristics (TJ=25°C, unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Unit
Off Characteristics
VDSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
BVDSS/TJ
Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced
to 25oC)
600
-
-
0.6
-V
- V/oC
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current (VDS=600V, VGS=0V)
Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C)
Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V)
Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V)
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3
Forward Transconductance (VDS=40V, ID=0.5A) *3
Dynamic Characteristics
2-4
- -8
- 0.75 -
V
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VGS=0V, VDS=25V, f=1MHz
- 210 250
- 19 25 pF
- 48
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V, ID=1.1A
RG=25*3
VDS=480V, ID=1.1A
VGS=10V *3
Drain-Source Diode Characteristics and Maximum Ratings
- - 30
- - 60
ns
- - 45
- - 75
- 15 20
- 4 - nC
-3-
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage (VGS=0V, IS=1A)
trr Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
Qrr Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
*3: Pulse Test: Pulse Width 300us, Duty Cycle2%
- - 1A
- - 4A
- - 1.4 V
- 190 -
ns
- 0.53 -
nC
H01N60I, H01N60J
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 3/5
TO-252 Dimension
M Marking:
A a1 Pb Free Mark
Pb-Free: " . " (Note)
Normal: None H
J
F 01N60
1
a5
L
C
G
23
a2
H
a1
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM Min. Max.
A 6.35 6.80
C 4.80 5.50
F 1.30 1.70
G 5.40 6.25
H 2.20 3.00
L 0.40 0.90
M 2.20 2.40
N 0.90 1.50
a1 0.40 0.65
a2 - *2.30
a5 0.65 1.05
*: Typical, Unit: mm
A
B
C
D
a1
E
J
K
a2
y2
F
y1
M
a1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HJ
0 1N6 0
GI
y1
H
L
a2
y1
N
a1
O
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM Min. Max.
A 6.40 6.80
B - 6.00
C 5.04 5.64
D - *4.34
E 0.40 0.80
F 0.50 0.90
G 5.90 6.30
H 2.50 2.90
I 9.20 9.80
J 0.60 1.00
K - 0.96
L 0.66 0.86
M 2.20 2.40
N 0.70 1.10
O 0.82 1.22
a1 0.40 0.60
a2 2.10 2.50
y1 -
5o
y2 -
3o
*: Typical, Unit: mm
H01N60I, H01N60J
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 4/5
TO-251 Dimension
AM
Tab F
C
G
123
K
H1
K1
a1
L
a1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HI
0 1N6 0
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 6.35 6.80
C 4.80 5.50
F 1.30 1.70
G 5.40 6.25
H1 6.75 8.00
K 0.50 0.90
K1 0.40 0.90
L 0.90 1.50
M 2.20 2.40
a1 0.40 0.65
a2 - *2.30
*: Typical, Unit: mm
3-Lead TO-251
a2 a2 Plastic Package
HSMC Package Code: I
A
B
C
DF
a1 y1
E
G
H
y1
J
K H1
K1
a2
y2
a2
y2
M
a1
I
y1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HI
0 1N6 0
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
a1
3-Lead TO-251
Plastic Package
HSMC Package Code: I
DIM Min. Max.
A 6.40 6.80
B - 6.00
C 5.04 5.64
D - *4.34
E 0.40 0.80
F 0.50 0.90
G 5.90 6.30
H - *1.80
H1 - *9.30
I - *16.10
J - *0.80
K - 0.96
K1 - *0.76
M 2.20 2.40
a1 0.40 0.60
a2 2.10 2.50
y1 - 5o
y2 - 3o
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H01N60I, H01N60J
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC ±5oC
H01N60I, H01N60J
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 5/5
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
10sec ±1sec
10sec ±1sec
HSMC Product Specification