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SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
The ICTE-5 through ICTE-45C series of Transient Voltage
Suppressors (TVSs) are designed for the protection of integrated
circuits that require very low Clamping Voltages (VC) during a
transient threat. Due to their very fast response time, protection
level and high Peak Pulse Power (PPP) capability, they are extremely
effective in providing protection against line transients generated by:
voltage reversals, capacitive or inductive load switching,
electromechanical switching, electrostatic discharge and
electromagnetic coupling.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
This series of TVS devices is designed to protect
Bipolar, MOS and Schottky improved integrated
circuits.
Transient protection for CMOS, MOS, Bipolar,
ICS (TTL, ECL, DTL, RTL and linear functions)
5.0 to 45 volts
Low clamping ratio
RoHS Compliant devices available by adding “e3”
suffix
APPLICATIONS / BENEFITS
These transient voltage suppressors are
designed for the protection of integrated
circuits. Characterized by a very low
clamping voltage together with a low standoff
voltage, they afford a high degree of
protection to: TTL, ECL, DTL, MOS, CMOS,
VMOS, HMOS, NMOS and static memory
circuits.
MAXIMUM RATINGS
1500 Watts of Peak Pulse Power (PPP)
dissipation at 25oC and 10x1000μs
tclamping (0 volts to V(BR) min):
<100 ps theoretical for unidirectional and <5 ns
for bidirectional
Operating and Storage temperatures: -65oC to
+150oC.
Forward surge rating: 200 amps, 1/120 second
at 25oC. (Applies to Unidirectional or single
direction only).
Steady State power dissipation: 5 watts.
Repetition rate (duty cycle): .05%
Clamping Factor: 1.33 @ Full rated power.
1.20 @ 50% rated power.
Clamping Factor: The ratio of the actual VC
(Clamping Voltage) to the actual V(BR)
(Breakdown Votlage) as measured on a
specific device.
MECHANICAL AND PACKAGING
CASE: Void-free, transfer molded
thermosetting epoxy body meeting UL94V-0
FINISH: Tin-lead or RoHS Compliant matte-
Tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode connected to case and
marked. Bidirectional not marked.
WEIGHT: 1.5 grams (approx.)
MOUNTING POSITION: Any
See package dimension on last page
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

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SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
ELECTRICAL CHARACTERISTICS @ 25oC (UNIDIRECTIONAL)
STAND-OFF
VOLTAGE
(NOTE 1)
MAXIMUM
REVERSE
LEAKAGE
@VWM
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
MICROSEMI
VWM
ID
V(BR)
PART NUMBER
VOLTS
μA
VOLTS
ICTE-5
5.0 300 6.0
ICTE-8
8.0 25 9.4
ICTE-10 10.0 2 11.7
ICTE-12 12.0 2 14.1
ICTE-15 15.0 2 17.6
ICTE-18 18.0 2 21.2
ICTE-22 22.0 2 25.9
ICTE-36 36.0 2 42.4
ICTE-45 45.0 2 52.9
VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
VOLTS
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
@ 10 x 1000μs
IPP3
A
160
100
90
70
60
50
40
23
19
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities for BIDIRECTIONAL)
ICTE-5C
5.0 300 6.0 7.1 7.5
ICTE-8C
8.0 25 9.4 11.4 11.6
ICTE-10C
10.0
2
11.7 14.1 14.5
ICTE-12C
12.0
2
14.1 16.7 17.1
ICTE-15C
15.0
2
17.6 20.8 21.4
ICTE-18C
18.0
2
21.2 24.8 25.5
ICTE-22C
22.0
2
25.9 30.8 32.0
ICTE-36C
36.0
2
42.4 50.6 54.3
ICTE-45C
45.0
2
52.9 63.3 70.0
C Suffix indicates Bidirectional
160
100
90
70
60
50
40
23
19
NOTE 1: TVSs are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or continuous
peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
OUTLINE AND CIRCUIT
FIGURE 1
Peak Pulse Power vs.
Pulse Time (TW) in μs
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2

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SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
FIGURE 2
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
FIGURE 3
Typical Capacitance vs. Breakdown Voltage
(Unidirectional Types)
PACKAGE DIMENSIONS
FIGURE 4
Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
Dimensions in inches (mm)
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3