KZT2907A.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 KZT2907A 데이타시트 다운로드

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SMD Type
Transistors
PNP Transistors
PZT2907A (KZT2907A)
Features
Epitaxial planar die construction
Complementary to PZT2222A
SOT-223
6.50±0.2
3.00±0.1
4
123
Unit:mm
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-60
-60
-5
-600
1
150
-55 to 150
Unit
V
mA
W
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SMD Type
PNP Transistors
PZT2907A (KZT2907A)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Emitter input capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μAIE= 0
VCEO
VEBO
Ic= -10 mAIB= 0
IE= -100μAIC= 0
ICBO VCB= -50 V , IE= 0
IEBO VEB= -5V , IC=0
IC=-150 mA, IB=-15mA
VCE(sat)
IC= -500 mA, IB= -50mA
IC=-150 mA, IB=-15mA
VBE(sat)
IC= -500 mA, IB= -50mA
hFE(1) VCE= -10V, IC=- 0.1mA
hFE(2) VCE= -10V, IC= -1mA
hFE(3) VCE= -10V, IC=- 10mA
hFE(4) VCE= -10V, IC= -150mA
hFE(5) VCE= -10V, IC= -500mA
td
tr
IC=-150mA, IB1=IB2=-15mA
ts
tf
Cib VEB= -2V, IC= 0,f=1MHz
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -20V, IC= -50mA,f=100MHz
Transistors
Min Typ Max Unit
-60
-60 V
-5
-100
-100
nA
-0.4
-1.6
V
-1.3
-2.6
75
100
100
100 300
50
12
30
nS
300
65
30
pF
8
200 MHz
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