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Darlington Transistors
BDW93, BDW94 Series
Features:
Designed for general-purpose amplifier and low speed switching applications
Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B
100 V (Minimum) - BDW93C, BDW94C
Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
Monolithic construction with built-in-base-emitter shunt resistor
Dimension Minimum Maximum
Pin : 1. Base
2. Collector
3. Emitter
4. Collector (Case)
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Peak
Base Current
Total Power Dissipation at TC = 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Thermal Characteristics
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.20 2.97
0.33 0.55
2.48 2.98
3.70 3.9
Dimensions : Millimetres
NPN
BDW93B
BDW93C
PNP
BDW94B
BDW94C
12 A
Darlington
Complementary Silicon
Power Transistors
45 to 100 V
80 W
TO-220
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
PD
TJ, TSTG
BDW93B
BDW94B
BDW93C
BDW94C
80 100
5
12
15
0.2
80
0.64
-65 to +150
Unit
V
A
W
W / °C
°C
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.56
Unit
°C / W
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Darlington Transistors
BDW93, BDW94 Series
Figure1 Power Derating
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
OFF Characteristics
Collector-Emitter Sustaining Voltage (1) BDW93B, BDW94B
(IC = 100 mA, IB = 0)
BDW93C, BDW94C
Collector Cut off Current
(VCE = 80 V, IB = 0)
Collector-Base Cut off Current
(VCB = Rated VCB, IE = 0)
Emitter-Base Cut off Current
(VEB = 5 V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 3 A, VCE = 3 V)
(IC = 5 A, VCE = 3 V)
(IC = 10 A, VCE = 3 V)
Collector-Emitter Saturation Voltage
(IC = 5 A, IB = 20 mA)
(IC = 10 A, IB = 100 mA)
Base-Emitter Saturation Voltage V
(IC = 5 A, IB = 20 mA)
(IC = 10 A, IB = 100 mA)
BDW93B, BDW94B
BDW93C, BDW94C
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%
Symbol
VCEO (sus)
ICEO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
Minimum
80
100
-
-
-
1,000
750
100
-
-
Maximum
-
1
100
2
20,000
2
3
2.5
4
Unit
V
mA
µA
mA
-
V
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Darlington Transistors
BDW93, BDW94 Series
BDW93 Series NPN
BDW94 Series PNP
NPN BDW93B and C
IC - Vbe
NPN BDW94B and C
IC - Vbe
VBE, Base - Emitter Voltage (V)
Switching Time
VBE, Base - Emitter Voltage (V)
Switching Time
IC, Collector Current (A)
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IC, Collector Current (A)
22/06/12 V1.1

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Darlington Transistors
BDW93, BDW94 Series
NPN BDW93B and C/PNP BDW94B and C
Active-Region Safe Operating Area (SOA)
NPN BDW93B and C
DC Current Gain
VCE, Collector Emitter Voltage (V)
PNP BDW94B and C
DC Current Gain
IC, Collector Current (A)
NPN BDW93B and C
Collector Saturation Region
IC, Collector Current (A)
PNP BDW94B and C
Collector Saturation Region
IB, Base Current (mA)
NPN BDW93B and C
VCE (Sat) - IC
IB, Base Current (mA)
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IC, Collector Current (A)
22/06/12 V1.1

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Darlington Transistors
BDW93, BDW94 Series
PNP BDW94B and C
VCE (Sat) - IC
IC, Collector Current (A)
Specification Table
IC (av)
Maximum
(A)
VCEO
Maximum
V
80
12
100
hFE
Minimum
at Ic = 5 A
750
Ptot
at 25°C
(W)
80
Package
TO-220
Type
NPN
PNP
Part Number
BDW94B
BDW93B
BDW93C
BDW94C
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
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all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
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