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DATA SHEET
BZX55-C SERIES
AXIAL LEAD ZENER DIODES
VOLTAGE 2.4 to 47 Volts
POWER
500 mWatts DO-35
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICAL DATA
• Case: Molded glass DO-35
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix :” -35” to order DO-35 Package
• Packing information
B - 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
Unit: inch (mm)
.020(0.52)TYP.
.079(2.0)MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
Parameter
Power Dissipation at Tamb = 25 OC
Symbol
PTOT
Junction Temperature
TJ
Storage Temperature Range
TS
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Value
500
175
-65 to +175
Parameter
Thermal Resistance Junction to Ambient Air
Symbol
RthA
Min.
--
Forward Voltage at IF = 100mA
VF --
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Typ.
--
--
Max.
0.3
1
Units
mW
OC
OC
Units
K/mW
V
STAD-SEP.14.2004
PAGE . 1

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Part Number
BZX55-C2V4
BZX55-C2V7
BZX55-C3V0
BZX55-C3V3
BZX55-C3V6
BZX55-C3V9
BZX55-C4V3
BZX55-C4V7
BZX55-C5V1
BZX55-C5V6
BZX55-C6V2
BZX55-C6V8
BZX55-C7V5
BZX55-C8V2
BZX55-C9V1
BZX55-C10
BZX55-C11
BZX55-C12
BZX55-C13
BZX55-C15
BZX55-C16
BZX55-C18
BZX55-C20
BZX55-C22
BZX55-C24
BZX55-C27
BZX55-C30
BZX55-C33
BZX55-C36
BZX55-C39
BZX55-C43
BZX55-C47
Nominal Zener Voltage
Nom. V
2.4
V Z @ IZT
Min. V
2.28
Max. V
2.56
2.7
2.50
2.90
3.0
2.80
3.20
3.3
3.10
3.50
3.6
3.40
3.80
3.9
3.70
4.10
4.3
4.00
4.60
4.7 4.40 5.00
5.1 4.80 5.40
5.6
5.20
6.00
6.2
5.80
6.60
6.8
6.40
7.20
7.5
7.00
7.90
8.2
7.70
8.70
9.1 8.50 9.60
10.0
9.40
10.60
11.0
10.40
11.60
12.0
11.40
12.70
13.0
12.40
14.10
15.0
13.80
15.60
16.0
15.30
17.10
18.0
16.80
19.10
20.0
18.80
21.20
22.0
20.80
23.30
24.0
22.80
25.60
27.0
25.10
28.90
30.0
28.00
32.00
33.0
31.00
35.00
36.0
34.00
38.00
39.0
37.00
41.00
43.0
40.00
46.00
47.0
44.00
50.00
Max. Zener Impedance
ZZT @ IZT
mA
85 5.0
85 5.0
85 5.0
85 5.0
85 5.0
85 5.0
75 5.0
60 5.0
35 5.0
25 5.0
10 5.0
8 5.0
7 5.0
7 5.0
10 5.0
15 5.0
20 5.0
20 5.0
26 5.0
30 5.0
40 5.0
50 5.0
55 5.0
55 5.0
80 5.0
80 5.0
80 5.0
80 5.0
80 5.0
90 2.5
90 2.5
110 2.5
ZZK @ IZK
mA
600 1.0
600 1.0
600 1.0
600 1.0
600 1.0
600 1.0
600 1.0
600 1.0
550 1.0
450 1.0
200 1.0
150 1.0
50 1.0
50 1.0
50 1.0
70 1.0
70 1.0
90 1.0
110 1.0
110 1.0
170 1.0
170 1.0
220 1.0
220 1.0
220 1.0
220 1.0
220 1.0
220 1.0
220 1.0
500 1.0
600 1.0
700 1.0
Max Reverse
Leakage Current
IR @ VR
uA V
50 1.0
10 1.0
4.0 1.0
2.0 1.0
2.0 1.0
2.0 1.0
1.0 1.0
0.5 1.0
0.1 1.0
0.1 1.0
0.1 2.0
0.1 3.0
0.1 5.0
0.1 6.0
0.1 7.0
0.1 7.5
0.1 8.5
0.1 9.0
0.1 10.0
0.1 11.0
0.1 12.0
0.1 14.0
0.1 15.0
0.1 17.0
0.1 18.0
0.1 20.0
0.1 22.0
0.1 24.0
0.1 27.0
0.1 30.0
0.1 33.0
0.1 36.0
marking
code
55C2V4
55C2V7
55C3V0
55C3V3
55C3V6
55C3V9
55C4V3
55C4V7
55C5V1
55C5V6
55C6V2
55C6V8
55C7V5
55C8V2
55C9V1
55C10V
55C11V
55C12V
55C13V
55C15V
55C16V
55C18V
55C20V
55C22V
55C24V
55C27V
55C30V
55C33V
55C36V
55C39V
55C43V
55C47V
STAD-SEP.14.2004
PAGE . 2

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Typical Characteristics (Tamb = 25 °C unless otherwise specified)
500
400
300
ll
200
100
0
0
95 9611
TL=constant
5 10 15
l – Lead Length ( mm )
20
Fig. 1 Thermal Resistance vs. Lead Length
1.3
VZtn=VZt/VZ(25°C)
1.2
TKVZ=10 x 10–4/K
8 x 10–4/K
1.1 6 x 10–4/K
4 x 10–4/K
2 x 10–4/K
1.0 0
–2 x 10–4/K
–4 x 10–4/K
0.9
0.8
–60
95 9599
0 60 120 180 240
Tj – Junction Temperature (°C )
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
600
500
400
300
200
100
0
0
95 9602
40 80 120 160 200
Tamb – Ambient Temperature(°C )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
15
10
5
IZ=5mA
0
–5
0
95 9600
10 20 30 40
VZ – Z-Voltage ( V )
50
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
Tj=25°C
100
10
IZ=5mA
1
0
95 9598
5 10 15 20
VZ – Z-Voltage ( V )
25
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
200
150
VR=2V
Tj=25°C
100
50
0
0
95 9601
5 10 15 20
VZ – Z-Voltage ( V )
Fig. 6 Diode Capacitance vs. Z-Voltage
25
STAD-SEP.14.2004
PAGE . 3

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100
10
Tj=25°C
1
0.1
0.01
0.001
0
95 9605
0.2 0.4 0.6 0.8
VF – Forward Voltage ( V )
1.0
Fig. 7 Forward Current vs. Forward Voltage
50
40
Ptot=500mW
Tamb=25°C
30
20
10
0
15
95 9607
20 25 30
VZ – Z-Voltage ( V )
Fig. 9 Z-Current vs. Z-Voltage
35
100
80
Ptot=500mW
Tamb=25°C
60
40
20
0
0
95 9604
4 8 12 16
VZ – Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
20
1000
IZ=1mA
100
5mA
10 10mA
1
0
95 9606
Tj=25°C
5 10 15 20 25
VZ – Z-Voltage ( V )
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
tp/T=0.5
100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
tp/T=0.01
1
10–1
95 9603
100
Single Pulse
RthJA=300K/W
T=Tjmax–Tamb
iZM=(–VZ+(VZ2+4rzj x T/Zthp)1/2)/(2rzj)
101
tp – Pulse Length ( ms )
102
Fig. 11 Thermal Response
STAD-SEP.14.2004
PAGE . 4