2SB1185.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SB1185 데이타시트 다운로드

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Power Transistor
FEATURES
Low VCE(sat).
VCE(sat)=-0.5V(TYP.)
(IC/IB=-2A/-0.2A)
Complements the 2SD1762.
Pb
Lead-free
Production specification
2SB1185
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
DC
Pulse
Junction and Storage Temperature
-50 V
-5 V
-3
A
-4.5
2W
-55 to +150
X016
Rev.A
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Production specification
Power Transistor
2SB1185
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=-50μA,IE=0
-60
V
Collector-emitter Breakdown Voltage V(BR)CEO IC=-1mA,IB=0
-50
V
Emitter-base Breakdown Voltage
V(BR)EBO IE=-50μA,IC=0
-5
V
Collector Cut-off Current
ICBO VCB=-40V,IE=0
-1 μA
Emitter Cut-off Current
IEBO VEB=-4V,IC=0
-1 μA
DC Current Gain
hFE
VCE=-6V,IC=-1mA
60
320
Collector-emitter Saturation Voltage VCE(sat)
IC=-2A, IB=-0.2A
-1 V
Base-emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
VBE(sat)
fT
Cob
IC=-2A, IB=-0.2A
VCE=-5V, IE=-0.5A
F=30MHz
VCB=-10V,IE=0,f=1
MHz
-1.5 V
70 MHz
50 pF
CLASSIFICATION OF hFE
Range
D
EF
Marking
90-180
135-270
200-400
X016
Rev.A
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Power Transistor
Production specification
2SB1185
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
X016
Rev.A
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Power Transistor
PACKAGE OUTLINE
Plastic surface mounted package
Production specification
2SB1185
TO-220AB
A
N
K
L
G
C
D
TO-220AB
Dim Min Max
A 9.80 10.30
B 8.70 9.10
C 4.47 4.67
D 1.17 1.37
E 2.64 2.84
F 13.14 13.74
G 2.44 2.64
H 28.03 28.83
M J 0.28 0.48
K 1.22 1.32
L 0.71 0.91
M 2.40 2.60
N 3.76 3.96
J All Dimensions in mm
X016
Rev.A
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