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High Efficiency Standard Rectifier
Single Diode
Part number
DLA10IM800UC
Marking on Product: MARLUI
1
3
2/4
DLA10IM800UC
VRRM
I FAV
VF
=
=
=
800 V
10 A
1.16 V
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Package: TO-252 (DPak)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b

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Rectifier
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 800 V
VR = 800 V
forward voltage drop
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
average forward current
TC = 145°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V f = 1 MHz
DLA10IM800UC
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150 °C
TVJ = 175°C
Ratings
min. typ. max.
900
800
5
0.05
1.22
1.40
1.16
1.45
10
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.50
3
0.84 V
30 m
2 K/W
K/W
75 W
120 A
130 A
100 A
110 A
72 A²s
70 A²s
50 A²s
50 A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b

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Package TO-252 (DPak)
Symbol Definition
I RMS
Tstg
T VJ
Weight
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal 1)
FC mounting force with clip
1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
DLA10IM800UC
Ratings
min. typ. max.
20
-55 150
-55 175
0.3
20 60
Unit
A
°C
°C
g
N
Product Marking
Logo
Marking on product
IXYS
abcdefg
Assembly Line
Date Code
Z YY
WW
Part number
D = Diode
L = High Efficiency Standard Rectifier
A = (up to 1200V)
10 = Current Rating [A]
IM = Single Diode
800 = Reverse Voltage [V]
UC = TO-252AA (DPak)
Ordering
Standard
Part Number
DLA10IM800UC
Marking on Product
MARLUI
Delivery Mode
Tape & Reel
Quantity Code No.
2500
503668
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
R0 max
threshold voltage
slope resistance *
0.84
27
* on die level
T VJ = 175°C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b

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Outlines TO-252 (DPak)
DLA10IM800UC
1
3
2/4
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b

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DLA10IM800UC
Rectifier
20
100
102
VR = 0 V
16
12
IF
8
[A]
4
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
80
IFSM
[A]
60
TVJ = 45°C
TVJ = 150°C
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
0
0.5 1.0 1.5
VF [V]
Fig. 1 Forward current versus
voltage drop
50 Hz, 80% VRRM
40
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
101
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time
16
14
12
10
Ptot
8
[W]
6
DC =
1
0.5
0.4
0.33
0.17
0.08
4
2
RthHA =
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
10.0 K/W
12.0 K/W
20
15
IF(AV)M
[A] 10
5
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200
0
0 50 100 150 200
IF(AV)M [A]
Tamb [°C]
TC [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Max. forward current vs.
case temperature
2.0
1.5
ZthJC
1.0
[K/W]
0.5
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 1.1
0.005
2 0.06
0.0003
3 0.14
0.045
4 0.2
0.2
5 0.5
0.05
0.0
1
10 100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b