CS35-08io4.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 CS35-08io4 데이타시트 다운로드

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Phase Control Thyristors
CS 35
VRRM = 800-1400 V
IT(RMS) = 120 A
IT(AV)M = 69 A
V
RSM
VDSM
V
900
1300
1500
V
RRM
VDRM
V
800
1200
1400
Type
CS 35-08io4
CS 35-12io4
CS 35-14io4
TO-208AC
2
1
2 (TO-65)
3
3
1 ¼"-28 UNF-2 A
1 = Anode, 2 = Cathode, 3 = Gate
Symbol
I
T(RMS)
IT(AV)M
ITSM
I2t
(di/dt)cr
(dv/dt)cr
PGM
PG(AV)
V
RGM
T
VJ
TVJM
T
stg
Md
Weight
Test Conditions
T =T
VJ VJM
Tcase = 85°C; 180° sine
Tcase = 80°C; 180° sine
TVJ = 45°C;
VR = 0
T =T
VJ VJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
repetitive, IT = 150 A
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.5 A
non repetitive, IT = IT(AV)M
diG/dt = 0.5 A/ms
TVJ = TVJM;
VDR = 2/3 VDRM
R
GK
=
¥;
method
1
(linear
voltage
rise)
TVJ = TVJM
I =I
T T(AV)M
tP = 30 ms
t=
P
500 ms
Mounting torque
Maximum Ratings
120 A
63 A
69 A
1200
1340
1100
1250
A
A
A
A
7200
7550
6050
6500
A2s
A2s
A2s
A2s
150 A/ms
400 A/ms
1000 V/ms
10
5
0.5
10
-40...+125
125
-40...+125
2.5
22
20
W
W
W
V
°C
°C
°C
Nm
lb.in.
g
Features
q Thyristor for line frequencies
q International standard package
JEDEC TO-208AC
q Planar glassivated chip
q Long-term stability of blocking
currents and voltages
Applications
q Motor control
q Power converter
q AC power controller
Advantages
q Space and weight savings
q Simple mounting
q Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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Symbol
IR, ID
V
T
VT0
rT
VGT
I
GT
V
GD
IGD
IL
IH
t
gd
tq
RthJC
RthJH
dS
d
A
a
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM; VD = VDRM
I
T
=
150
A;
T
VJ
=
25°C
For power-loss calculations only (TVJ = 125°C)
£ 10 mA
£ 1.5 V
0.85 V
3.5 mW
VD = 6 V;
V = 6 V;
D
T =T ;
VJ VJM
TVJ = 25°C
TVJ = -40°C
T
VJ
=
25°C
TVJ = -40°C
V = 2/3 V
D DRM
£ 1.5 V
£ 1.9 V
£ 100 mA
£ 200 mA
£ 0.2 V
£ 1 mA
TVJ = 25°C; tP = 30 ms
IG = 0.1 A; diG/dt = 0.1 A/ms
£ 100 mA
TVJ = 25°C; VD = 6 V; RGK = ¥
£ 80 mA
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
IG = 0.1 A; diG/dt = 0.1 A/ms
£ 2 ms
TVJ = TVJM; IT = 50 A, tP = 200 ms; di/dt = -10 A/ms typ. 100 ms
VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 VDRM
DC current
DC current
0.4 K/W
0.6 K/W
Creepage distance on surface
Strike distance through air
Max. acceleration, 50 Hz
1.7 mm
1.7 mm
50 m/s2
CS 35
10
V8
6
4
VG
2
1: PG(AV)= 0.5 W
2:
P=
GM
5
W;
t
G
=
500
ms
3:
P=
GM
10
W;
t
G
=
30
ms
23
1
1
0.8
0.6 B
0.4
A
C
IGD: TVJ= -40°C
IGD: TVJ= 0°C
IGD: TVJ= 25°C
0.2
0.1
100
IGD: TVJ= 25°C
IGD: TVJ=125°C
2 4 68
101 102 103 mA 104
IG
Fig. 1 Gate trigger range
Triggering:
A = no; B = possible, C = safe
© 2000 IXYS All rights reserved
500
A
400
IT
TVJ= 25°C
TVJ= 125°C
typ. lim.
300
200
100
0
0 1 2 3V
VT
Fig. 2 On-state characteristics
4
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CS 35
1200
A
1000
ITSM
800
600
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 125°C
104
V =0V
A2s R
6
I2t TVJ = 45°C
4
TVJ = 125°C
150
A
IT(AV)M
100
DC
180° sin
120°
60°
30°
400 50
2
200
0
10-3 10-2 10-1 100 s
t
Fig. 3 Surge overload current
ITSM: crest value, t: duration
101
200
W
150
PT
100
DC
180° sin
120°
60°
50 30°
103
1 2 3 4 5 6 7 m8 s910
t
Fig. 4 I2t versus time (1-10 ms)
RthJA :
0.9 K/W
1.3 K/W
1.6 K/W
3.3 K/W
0
0 50 100 °C 150
Tcase
Fig. 5 Maximum forward current at
case temperature
0
0 20 40 60 80 100 120A 1400 50 100
IT(AV)M
Tamb
Fig. 6 Power dissipation versus on-state current and ambient temperature
°C 150
0.8
K/W
0.6
ZthJH
30°
60°
120°
180°
DC
RthJH for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJH (K/W)
0.6
0.65
0.677
0.725
0.775
0.4
0.2
0.0
10-3
10-2
10-1
100
Fig. 7 Transient thermal impedance junction to heatsink
101 s
t
Constants for ZthJH calculation:
i
1
2
3
4
102
Rthi (K/W)
0.01
0.09
0.30
0.20
ti (s)
0.001
0.013
0.3
0.9
© 2000 IXYS All rights reserved
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