DSEI60-10A.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 DSEI60-10A 데이타시트 다운로드

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Fast Recovery
Epitaxial Diode (FRED)
DSEI 60
IFAVM = 60 A
VRRM = 1000 V
trr = 35 ns
VRSM
V
1000
VRRM
V
1000
Type
DSEI 60-10A
TO-247 AD
AC
C
A
A = Anode, C = Cathode
C
Symbol
IFRMS
IFAVM ÿÿx
IFRM
IFSM
I2t
TVJ
TVJM
Tstg
Ptot
Md
Weight
Symbol
IR
VF
VT0
rT
RthJC
RthCK
RthJA
trr
IRM
Test Conditions
TVJ = TVJM
TC = 60°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
Mounting torque
Maximum Ratings
100
60
800
500
540
450
480
1250
1200
1000
950
-40...+150
150
-40...+150
189
0.8...1.2
6
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
°C
°C
°C
W
Nm
g
Test Conditions
Characteristic Values
typ. max.
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 60 A;
TVJ = 150°C
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
0.25
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C
VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms
L £ 0.05 mH; TVJ = 100°C
35
32
3
0.5
14
1.8
2.3
1.43
6.1
0.66
35
50
36
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
Features
q International standard package
JEDEC TO-247 AD
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low I -values
RM
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Anti saturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
q Operating at lower temperature or
space saving by reduced cooling
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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DSEI 60, 1000 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di /dt.
F
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
Dimensions
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 2.2 2.54
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
© 2000 IXYS All rights reserved
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