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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG15I400PM
31
DPG15I400PM
VRRM
I FAV
t rr
=
=
=
400 V
15 A
45 ns
Backside: isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-220FP
Isolation Voltage: 2500 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Soldering pins for PCB mounting
Base plate: Plastic overmolded tab
Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

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DPG15I400PM
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 400 V
VR = 400 V
forward voltage drop
IF = 15 A
IF = 30 A
IF = 15 A
IF = 30 A
average forward current
TC = 90°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 200 V f = 1 MHz
t rr reverse recovery time
IF = 15 A; VR = 270 V
-diF/dt = 200 A/µs
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max.
400
400
1
0.18
1.39
1.63
1.14
1.40
15
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
0.50
16
4
5.5
45
70
0.84 V
16.5 m
4.2 K/W
K/W
35 W
190 A
pF
A
A
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

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DPG15I400PM
Package TO-220FP
Symbol Definition
I RMS
TVJ
T op
Tstg
Weight
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal
MD
F
C
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
Ratings
min. typ. max.
35
-55 175
-55 150
-55 150
2
0.4 0.6
20 60
3.2 2.7
2.5 2.5
2500
2080
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
Product Marking
Part Number
DateCode Logo
Assembly Code
Assembly Line
abcdef
YYWW Z
XXXXXX
Part number
D = Diode
P = HiPerFRED
G = extreme fast
15 = Current Rating [A]
I = Single Diode
400 = Reverse Voltage [V]
PM = TO-220ACFP (2)
Ordering
Standard
Part Number
DPG15I400PM
Marking on Product
DPG15I400PM
Delivery Mode
Tube
Quantity Code No.
50 503814
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
Fast
Diode
0.84
13.3
* on die level
T VJ = 175 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

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DPG15I400PM
Outlines TO-220FP
E ØP
Q
D
A
H
A1
1
L1
3
d1
L
A2
b1 b
e Note:
c
All metal surface are
matte pure tin plated
except trimmed area.
Dim. Millimeters
min max
A 4.50 4.90
A1 2.34 2.74
A2 2.56 2.96
b 0.70 0.90
b1 1.27 1.47
c 0.45 0.60
D 15.67 16.07
d1 0
1.10
E 9.96 10.36
e 2.54 BSC
H 6.48 6.88
L 12.68 13.28
L1 3.03 3.43
Ø P 3.08 3.28
Q 3.20 3.40
Inches
min max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.050 0.058
0.018 0.024
0.617 0.633
0 0.043
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
31
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

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DPG15I400PM
Fast Diode
80
70
60
IF 50
0.4
0.3
Qrr
30 A
15 A
7.5 A
12
10
IRM 8
IF = 30 A
I
F
=
15
A
IF = 7.5 A
40 0.2
[A] 30
20
TVJ = 25°C
150°C
[μC]
0.1
10
0
0.0 0.5 1.0 1.5 2.0 2.5
0.0
0
TVJ = 125°C
VR = 270 V
100 200 300 400 500 600
[A] 6
4
TVJ = 125°C
VR = 270 V
2
0 100 200 300 400 500 600
VF [V]
Fig. 1 Forward current
IF versus VF
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
1.4
1.2
1.0
0.8
Kf 0.6 IRM
0.4
0.2 Qrr
120
100
trr 80
[ns] 60
40
T = 125°C
VJ
VR = 270 V
I = 30 A
F
15 A
7.5 A
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
20
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
18
TVJ = 125°C
16 IF = 15 A
14 VR = 270 V
450
400
350
12
VFR 10
[V] 8
6
4
VFR
2
300
250
200tfr
[ns]
150
100
tfr
50
00
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
25
T = 125°C
VJ
VR = 270 V
20
Erec 15
[μJ] 10
IF = 30 A
IF = 15 A
IF = 7.5 A
5
4
3
ZthJC
2
[K/W]
1
0
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0
0.001
0.01
0.1
t [s]
Fig. 8 Transient thermal resistance junction to case
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
10
20131101a