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CMPT918
CentralTM
Semiconductor Corp.
NPN SILICON RF TRANSISTOR
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT918 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high frequency (VHF/UHF)
amplifier and oscillator applications.
Marking code is C3B.
MAXIMUM RATINGS (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
ΘJA
30
15
3.0
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
fT
Cob
Cob
Cib
Pout
Gpe
NF
TEST CONDITIONS
MIN
VCB=15V
IC=1.0µA
30
IC=3.0mA
15
IE=10µA
3.0
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=1.0V, IC=3.0mA
20
VCE=10V, IC=4.0mA, f=100MHz
600
VCB=0V, IE=0, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCB=15V, IC=8.0mA, f=500MHz
30
VCB=12V, IC=6.0mA, f=200MHz
11
VCE=6.0V, IC=1.0mA, RS=50, f=60MHz
UNITS
V
V
V
mA
mW
oC
oC/W
MAX
10
0.4
1.0
3.0
1.7
2.0
6.0
UNITS
nA
V
V
V
V
V
MHz
pF
pF
pF
mW
dB
dB
154

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All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
155