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STD80N10F7, STF80N10F7,
STH80N10F7-2, STP80N10F7
N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™
2
Power MOSFETs in DPAK, TO-220FP, H PAK-2 and TO-220
Datasheet - production data
TAB
3
1
DPAK
TAB
2
3
1
H2PAK-2
3
2
1
TO-220FP
TAB
3
2
1
TO-220
Features
Order codes
VDS @ RDS(on)
TJmax max
STD80N10F7
0.01 Ω
STF80N10F7
0.01 Ω
100 V
STH80N10F7-2
0.0095 Ω
STP80N10F7
0.01 Ω
ID
70 A
40 A
80 A
PTOT
85 W
30 W
110 W
Extremely low gate charge
Ultra low on-resistance
Low gate input resistance
Figure 1. Internal schematic diagram
' 7$%
' 7$%
* 
6 
* 
6 
Applications
Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
'3$.72DQG
72)3 QR7$%
+3$.
$0Y
Order codes
STD80N10F7
STF80N10F7
STH80N10F7-2
STP80N10F7
Table 1. Device summary
Marking
Package
80N10F7
DPAK
TO-220FP
2
H PAK-2
TO-220
Packaging
Tape and reel
Tube
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID025865 Rev 1
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Contents
Contents
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
DPAK
H2PAK-2
Unit
TO-220FP
TO-220
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
(1)
IDM
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
100
± 20
70 80 40
48 54 30
280 320 160
85 110 30
- 55 to 175
V
V
A
A
A
W
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP H2PAK-2 TO-220
Rthj-pcb Thermal resistance junction-pcb max
Thermal resistance junction-ambient
Rthj-amb max
Rthj-case Thermal resistance junction-case max
50
1.76
62.5
5
35 °C/W
62.5 °C/W
1.36 °C/W
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Electrical characteristics
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 250 μA, VGS = 0
100
V
Zero gate voltage
IDSS
drain current (VGS = 0)
Gate-body leakage
IGSS
current (VDS = 0)
VGS(th) Gate threshold voltage
Static drain-source
RDS(on) on-resistance
VDS = 100 V
VDS = 100 V, TC=125 °C
VGS = 20 V
VDS = VGS, ID = 250 μA
for DPAK, TO-220 and
TO-220FP: ID = 40 A, VGS=10 V
2
for H PAK-2: VGS=10 V, ID=40 A
1 μA
100 μA
100 μA
2.5 3.5 4.5 V
0.0085 0.010 Ω
0.008 0.0095 Ω
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 50 V, f = 1 MHz,
VGS = 0
VDD = 50 V, ID = 80 A,
VGS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
- 3100 -
- 700 -
pF
pF
- 45 - pF
- 45 - nC
- 18 - nC
- 13 - nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 50 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and Figure 22)
Min. Typ. Max. Unit
- 19 - ns
- 32 - ns
- 36 - ns
- 13 - ns
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STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 80 A
(1)
ISDM Source-drain current (pulsed)
- 320 A
(2)
VSD Forward on voltage
ISD = 80 A, VGS = 0
-
1.1 V
trr Reverse recovery time
-
ISD = 80 A, di/dt = 100 A/μs
70
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 80 V, Tj=150 °C
(see Figure 22)
- 125
- 3.6
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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