CMT06N60.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 CMT06N60 데이타시트 다운로드

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CMT06N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
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Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 1

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CMT06N60
POWER FIELD EFFECT TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Value
6.0
18
±20
±40
125
45
-55 to 150
180
1.0
62.5
260
Unit
A
V
V
W
mJ
/W
ORDERING INFORMATION
Part Number
CMT06N60N220
CMT06N60N220FP
Package
TO-220
TO-220FP
TEST CIRCUIT
Test Circuit – Avalanche Capability
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 2

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CMT06N60
POWER FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
Forward Transconductance (VDS = 15 V, ID = 3.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 6.0 A,
VGS = 10 V,
RG = 9.1) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 300 V, ID = 6.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 6.0 A,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT06N60
Min Typ Max
600
100
50
100
100
2.0 4.0
1.2
3.4
1498
2100
158 220
29 60
14 30
19 40
40 80
26 55
35.5 50
8.1
14.1
4.5
7.5
Units
V
μA
nA
nA
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
0.83 1.2
V
ton ** ns
trr 266 ns
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 3

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CMT06N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 4

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PACKAGE DIMENSION
D
φ
CMT06N60
POWER FIELD EFFECT TRANSISTOR
TO-220
A
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
e
b1 b
e1
Front View
R1.50
B
C
R3.18± 0.10
A1
c
Side View
TO-220FP
I
J
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
φ
b
b1 b2
e
Front View
K
N
M
R
Side View
Back View
A
B
C
D
E
G
H
I
J
K
M
N
O
P
Q
R
b
b1
b2
e
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 5