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600V N-Channel MOSFET
Features
4.5A,600v,RDS(on)=2.5@VGS=10V
Gate charge (Typical 27nC)
High ruggedness
Fast switching
100% AvalancheTested
Improved dv/dt capability
SSP5N60/SSF5N60C
General Description
This Power MOSFET is produced using Sourcesemi’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at AC
adaptors, on the battery charger and SMPS
Absolute Maximum Ratings
Symbol
Parameter
VDSS Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
ID
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
SSP5N60C SSF5N60C Units
600 V
4.5 4.5* A
2.5 2.5* A
(Note 1)
16
16* A
±30 V
(Note 2)
240 mJ
(Note 1) 10 mJ
(Note 3)
5.0 V/ns
100 33
W
0.8 0.26 W/ °C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5
seconds.
-55 ~ 150
300
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ
Thermal Resistance, Junction-to-Ambient
SSP5N60C
1.25
0.5
62.5
SSF5N60C
3.79
0.5
62.5
Units
°C/W
°C/W
°C/W
1/7 REV:1.0.0

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SSP5N60/SSF5N60C
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS
Δ BVDSS
TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS Drain-Source Leakage Current
Gate-Source Leakage, Forward
IGSS
Gate-source Leakage, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
V GS =10 V, ID = 2.A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =4.5A, RG =25
(Note 4, 5)
VDS =480V, VGS =10V, ID =4.5A
(Note 4, 5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS=4.5A, VGS =0V
IS=4.5A, VGS=0V,dIF/dt=100A/us
IS=4.5A, VGS=0V,dIF/dt=100A/us
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Min.
--
--
--
--
--
Typ Max Units
--
0.65
--
--
--
--
--
--
10
100
100
-100
V
V/°C
uA
uA
nA
nA
-- 4.0
2.0 2.5
V
710 920
65 85 pF
14 19
20
55
70
55
27
3.6
13.1
50
120
150
120
30
--
--
ns
nC
Typ.
--
--
--
330
2.67
Max.
4.5
16
1.4
--
--
Unit.
A
V
ns
uC
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25.0mH, IAS =4.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 4.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature
2/7 REV:1.0.0

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SSP5N60/SSF5N60C
3/7 REV:1.0.0