2SD1606.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1606 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1606
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 3A
APPLICATIONS
·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICP Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
120 V
120 V
7V
6A
12 A
40 W
150
-55~150
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1606
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB= 60mA
ICBO Collector Cutoff Current
VCB= 120V; IE= 0
ICEO Collector Cutoff Current
VCE= 100V; RBE=
hFE DC Current Gain
IC= 3A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 6A
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 3A, IB1= -IB2= 6mA
MIN TYP. MAX UNIT
120 V
7V
1.5 V
3.0 V
2.0 V
3.5 V
100 μA
10 μA
1000
20000
3.0 V
0.6 μs
7.0 μs
2.0 μs
isc websitewww.iscsemi.cn
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