2SD1662.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1662 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPLICATIONS
·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100 V
5V
IC Collector Current-Continuous
15 A
IB Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
1A
100 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A ,IB= 25mA
ICBO Collector Cutoff current
VCB= 100V, IE= 0
1.5 V
2.2 V
100 μA
IEBO Emitter Cutoff Current
hFE DC Current Gain
VEB= 5V; IC= 0
IC= 15A; VCE= 3V
1000
10 mA
COB Output Capacitance
fT Current-Gain—Bandwidth Product
Switching Times
IE= 0;VCB= 10V;ftest= 1.0MHz
IC= 1A; VCE= 5V
280
14
pF
MHz
ton Turn-On Time
tstg Storage Time
tf Fall Time
1.0 μs
IB1 = -IB2= 10mA; RL= 10Ω;
VCC= 50V
2.0
μs
1.5 μs
isc websitewww.iscsemi.cn
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