2SD1896.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1896 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1896
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·High Collector Power Dissipation
·Good Linearity of hFE
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
ICM Collector Current-Pulse
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
10 A
2
W
40
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1896
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC= 50μA; IE= 0
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
MIN TYP. MAX UNIT
100 V
100 V
5V
1.0 V
1.5 V
10 μA
10 μA
100 200
8 MHz
100 pF
isc websitewww.iscsemi.cn
2