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INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2SJ126
DESCRIPTION
·Low Drain-Source ON Resistance
·High Forward Transfer Admittance
·Low Leakage Current
·Enhancement-Mode
APPLICATIONS
·High speed switching application
·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
-60
±20
V
V
ID Drain Current-continuous@ TC=37-10 A
Ptot Total Dissipation@TC=25
40 W
Tj Max. Operating Junction Temperature -55~150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 /W
75 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc P-Channel Mosfet Transistor
isc Product Specification
2SJ126
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -5A
IGSS Gate Source Leakage Current
VGS= -20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= -60V,VGS= 0
VSD Diode Forward Voltage
IF=-10 A;VGS= 0
MIN MAX UNIT
-60 V
-1.5 -3.5
0.4
V
Ω
-100 nA
-1 mA
-4.5 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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