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INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
DESCRIPTION
·Low On Resistance
·High Speed Switching
·Low Drive Current
isc Product Specification
2SJ221
APPLICATIONS
·High speed switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
-100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37-20 A
Total Dissipation@TC=25
75 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 /W
75 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc P-Channel Mosfet Transistor
isc Product Specification
2SJ221
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -10A
IGSS Gate Source Leakage Current
VGS= -16V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= -80V,VGS= 0
VSD Diode Forward Voltage
IF=-20 A;VGS= 0
MIN MAX UNIT
-100
V
-1.0 -2
0.16
V
Ω
-10 uA
-0.25 mA
-1.05
V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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