2SJ380.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SJ380 데이타시트 다운로드

No Preview Available !

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2SJ380
DESCRIPTION
·Low Drain-Source ON Resistance
·High Forward Transfer Admittance
·Low Leakage Current
·Enhancement-Mode
APPLICATIONS
·High speed switching application
·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
-100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37-12 A
Total Dissipation@TC=25
35 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.57 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

No Preview Available !

INCHANGE Semiconductor
isc P-Channel Mosfet Transistor
isc Product Specification
2SJ380
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6A
IGSS Gate Source Leakage Current
VGS= -16V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= -100V,VGS= 0
VSD Diode Forward Voltage
IF=-12A;VGS= 0
MIN MAX UNIT
-100
V
-0.8 -2.0
0.21
V
Ω
-10 uA
-0.1 mA
-1.7 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn