TMP8N50ZG.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 TMP8N50ZG 데이타시트 다운로드

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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP8N50Z(G)/TMPF8N50Z(G)
BVDSS
500V
N-channel MOSFET
ID RDS(on)
8A <0.85W
Device
TMP8N50Z/TMPF8N50Z
TMP8N50ZG/TMPF8N50ZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP8N50Z/TMPF8N50Z
TMP8N50ZG/TMPF8N50ZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP8N50Z(G) TMPF8N50Z(G)
500
±30
8.0 8.0 *
4.5 4.5 *
32 32 *
554
8
12
120 39
0.96 0.31
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
August 2012 : Rev0
www.trinnotech.com
TMP8N50Z(G)
1.04
62.5
TMPF8N50Z(G)
3.2
62.5
Unit
/W
/W
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TMP8N50Z(G)/TMPF8N50Z(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 500 --
--
V
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
IDSS
VDS = 400 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.0A
VDS = 30 V, ID = 4.0A
3 -- 5 V
-- 0.72 0.85 W
-- 10 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 937 --
-- 132 --
-- 19 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 250 V, ID = 8.0A,
--
28
--
ns
tr
RG = 25
-- 33 -- ns
td(off)
-- 81 -- ns
tf -- 24 -- ns
Qg VDS = 400V, ID = 8.0A, -- 21 -- nC
Qgs
VGS = 10 V
-- 4.5 -- nC
Qgd -- 10 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 8.0 A
VGS = 0 V, IS = 8.0 A
dIF / dt = 100 A/µs
-- -- 8 A
-- -- 32 A
-- -- 1.5 V
-- 315 --
ns
-- 2.2 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=15.6mH, I AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD 8.0A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
August 2012 : Rev0
www.trinnotech.com
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16
Top V =15.0V
GS
10.0V
9.0V
12 8.0V
7.0V
6.0V
Bottom 5.0V
8
4
1. T = 25
C
2. 250μs Pulse Test
0
0 3 6 9 12 15
Drain-Source Voltage, V [V]
DS
TMP8N50Z(G)/TMPF8N50Z(G)
V = 30V
DS
250 μs Pulse Test
10
150
25
1
-55
0.1
2 4 6 8 10 12
Gate-Source Voltage, V [V]
GS
1.5
T = 25
J
1.0
V = 10V
GS
0.5
V = 20V
GS
0.0
0 4 8 12 16 20
Drain Current,I [A]
D
32
V = 0V
GS
250μs Pulse Test
24
16
150
25
8
0
0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V]
SD
2.0
2000
1500
1000
500
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
V =0V
GS
f = 1 MHz
C
iss
C
oss
C
rss
12
I = 8.0A
D
10
8
6
4
2
V = 250V
DS
V = 100V
DS
V = 400V
DS
0
10-1 100 101
Drain-Source Voltage, V [V]
DS
August 2012 : Rev0
0
0
www.trinnotech.com
5 10 15 20
Total Gate Charge, Q [nC]
G
25
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TMP8N50Z(G)/TMPF8N50Z(G)
1.3
V =0V
GS
1.2
I = 250 μA
D
1.1
1.0
0.9
0.8
0.7
-80
-40
0 40 80
Junction Temperature,T [oC]
J
120
160
3.5
V = 10 V
GS
3.0
I = 4.0 A
D
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40 0 40 80 120
Junction Temperature, T [oC]
J
160
10
8
6
4
2
0
25 50 75 100 125 150
Case Temperature, T []
C
1.5
1.0
0.5
0.0
-80
V =V
DS GS
I = 250 A
D
-40
0 40 80
Junction Temperature, T [oC]
J
120
160
102
Operation in This Area
is Limited by R
DS(on)
10 us
102
Operation in This Area
is Limited by R
DS(on)
10 us
100 us
100 us
101
1 ms
101
1 ms
10 ms
10 ms
100 ms
100 ms
DC
100
DC
100
10-1
10-2
100
T = 25 oC
C
T = 150 oC
J
Single Pulse
101 102
Drain-Source Voltage, V [V]
DS
August 2012 : Rev0
10-1
T = 25 oC
C
T = 150 oC
J
Single Pulse
10-2
103 100
101
102
Drain-Source Voltage, V [V]
DS
www.trinnotech.com
103
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TMP8N50Z(G)/TMPF8N50Z(G)
TMP8N50Z(G)
100
Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.04 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF8N50Z(G)
Duty=0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 3.2/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
August 2012 : Rev0
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