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2SK1305
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
12 3
S
REJ03G0924-0200
(Previous: ADE-208-1263)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6

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2SK1305
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
td(on)
tr
td(off)
tf
VDF
trr
Note: 3. Pulse test
Min
100
±20
1.0
4.5
Typ
0.20
0.25
7.0
525
205
60
5
50
170
75
1.2
220
Ratings
100
±20
10
40
10
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
2.0
0.25
0.35
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *3
ID = 5 A, VGS = 4 V *3
ID = 5 A, VDS = 10 V *3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6

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2SK1305
Main Characteristics
Power vs. Temperature Derating
30
20
10
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
6V
16
Pulse Test
4V
12
3.5 V
8
3V
4 VGS = 2.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
Pulse Test
2.0 10 A
1.5
5A
1.0
0.5 ID = 2 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
OpiserLaitmiointeidn bthyisRADrSea(on)
DC
3
1.0
Operation (T
0.3 Ta = 25°C
C = 25°C)
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
6
4
2 TC = 75°C
25°C
–25°C
0 1 2 34 5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
VGS = 4 V
0.2
10 V
0.1
0.05
0.5
12
5 10 20
Drain Current ID (A)
50

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2SK1305
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3 VGS = 4 V
ID = 10 A
5A
2A
10 A
5A
2A
0.2
10 V
0.1
0
–40 0 40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
di/dt = 50 A/µs
20 VGS = 0, Ta = 25°C
Pulse Test
10
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200 20
160
VDD = 25 V
50 V
120 80 V
16
VGS
12
80 VDS
8
40
VDD = 80 V
ID = 10 A
4
50 V
25 V
0
0 8 16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
20 Pulse Test
10
TC = –25°C
5
25°C
75°C
2
1
0.5
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10
10,000
Typical Capacitance vs.
Drain to Source Voltage
1,000
Ciss
Coss
100
VGS = 0
f = 1 MHz
10
0 10
20
Crss
30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td(off)
200
100
tf
50
20
10
5
0.2
tr
VGS = 10
duty < 1
V, PW
% VDD
==..
2 µs
30 V
td(on)
0.5 1 2
5 10 20
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6

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2SK1305
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
5V
4 VGS = 10 V
0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1
0.05
0.02
0.03
0.01
1 Shot
Pulse
0.01
10 µ
100 µ
θch–c (t) = γS (t) • θch–c
θch–c = 5.0°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
50
Vin = 10 V
VDD .=. 30 V
Waveforms
90 %
Vin 10 %
Vout 10 %
10 %
td(on)
90 %
tr
90 %
td(off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6