12N65.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 12N65 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N65
·FEATURES
·Drain Current –ID= 12A@ TC=25
·Drain Source Voltage-
: VDSS= 650V (Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
±30
V
V
ID Drain Current-Continuous
12 A
IDM Drain Current-Single Plused
48 A
PD Total Dissipation @TC=25
225 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.56 /W
62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N65
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 6.0A
VGS= ±30V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
VSD Forward On-Voltage
IS= 12A; VGS= 0
MIN MAX UNIT
650 V
24V
0.85 Ω
±100 nA
1 μA
1.4 V
·
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark