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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA505
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min.)
·Collector-Emitter Saturation Voltage-
VCE(sat)= -0.8V (Max.)@ IC= -500mA
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-50 V
VEBO Emitter-Base Voltage
-5.0 V
IC Collector Current-Continuous
-1 A
IE Emitter Current-Continuous
1A
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature Range
1W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA505
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
-50
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -500mA; VCE= -2V
ICBO Collector Cutoff Current
VCB= -30V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5; IC= 0
-0.8 V
-1.3 V
-1.0 μ A
-1.0 μ A
hFE-1
DC Current Gain
IC= -50mA; VCE= -2V
40 240
hFE-2
DC Current Gain
IC= -800mA; VCE= -2V
fT
Current-GainBandwidth Product
IC= -10mA; VCE= -10V
13
100
MHz
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
20 pF
hFE-1 Classifications
ROY
40-80 70-140 120-240
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark