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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA651
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature
-150
V
-5 V
-10 A
100 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA651
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
ICBO Collector Cutoff Current
VCB= -200V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -2A; VCE= -5V
COB Collector Output Capacitance
IE=0; VCB= -5V; f= 1MHz
fT
Current-GainBandwidth Product
IC= -0.5A; VCE= -10V
-200
-150
V
-5 V
-2.0 V
-2.5 V
-0.1 mA
-0.1 mA
30 150
500 pF
10 MHz
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark