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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA652
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·Contunuous Collector Current IC= -1A
·Power DissipationPC= 15W @TC= 25
APPLICATIONS
·Designed for low frequency power amplifier color TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-1.0 A
PC Collector Power Dissipation@TC=2515
W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA652
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
ICBO Collector Cutoff Current
VCB= -150V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
-1.5 V
-2.0 V
-10 μ A
-10 μ A
hFE DC Current Gain
IC= -0.2A; VCE= -5V 40 200
COB Collector Output Capacitance
IE=0; VCB= -5V; f= 1MHz
fT
Current-GainBandwidth Product
IC= -0.1A; VCE= -10V
100 pF
15 MHz
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark