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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=7550
W
TJ Junction Temperature
175
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD101A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO Collector Cutoff Current
VCE= 50V; IB=0
ICBO Collector Cutoff Current
VCB= 50V; IE=0
hFE DC Current Gain
IC= 2A; VCE= 5V
fT Current Gain-Bandwidth Product
IC= 0.5A; VCE= 12V
MIN MAX UNIT
100 V
150 V
4V
0.8 V
2.0 mA
1.0 mA
20
1 MHz
isc websitewww.iscsemi.cn
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