3DD208.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 3DD208 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD208
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 1A
APPLICATIONS
·Designed for switching regulator and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3A
PC Collector Power Dissipation@TC=2550
W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD208
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
ICEO Collector Cutoff Current
VCE= 50V; IB= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
hFE DC Current Gain
IC= 0.5A; VCE= 10V
MIN MAX UNIT
200 V
300 V
6V
2.0 V
0.1 mA
0.1 mA
30 250
isc websitewww.iscsemi.cn
2