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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2121
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·Complement to Type 2SC5949
APPLICATIONS
·Power amplifier applications
·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-15 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-1.5 A
220 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2121
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on)
Base-Emitter On Voltage
IC= -8A ; VCE= -5V
ICBO Collector Cutoff Current
VCB= -200V ; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
-3.0 V
-1.5 V
-5 μ A
-5 μ A
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55 160
hFE-2
DC Current Gain
IC= -8A ; VCE= -5V
35
COB Output Capacitance
IE=0 ; VCB= -10V;f= 1.0MHz
fT
Current-GainBandwidth Product
IC=-1A ; VCE= -5V
470 pF
25 MHz
hFE-1 Classifications
RO
55-110 80-160
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark