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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2140
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180 V
VCEO
Collector-Emitter Voltage
-180 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-1.5 A
ICP Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-3 A
2
W
20
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2140
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
-180
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICBO Collector Cutoff Current
VCB= -180V ; IE= 0
IEBO Emitter Cutoff Current
VEB= -6V; IC= 0
hFE DC Current Gain
IC= -0.1A ; VCE= -5V
-0.5 V
-100 μ A
-100 μ A
60 240
COB Collector Output Capacitance
fT Current-GainBandwidth Product
IE= 0; VCB= -10V; f= 1MHz
IC= -0.2A; VCE= -10V; f= 10MHz
30 pF
100 MHz
Switching Times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= -0.4A,VCC= 100V
IB1= -IB2= -0.04A
0.1 μ s
1.0 μ s
0.1 μ s
hFE Classifications
QP
60-140 120-240
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark