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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2151A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -230V(Min)
·Good Linearity of hFE
·Complement to Type 2SC6011A
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -15 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-4 A
160 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc&iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2151A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO Collector Cutoff Current
VCB= -230V ; IE= 0
IEBO Emitter Cutoff Current
VEB= -6V; IC= 0
hFE DC Current Gain
IC= -3A ; VCE= -4V
COB Output Capacitance
fT Current-GainBandwidth Product
IE= 0 ; VCB= -10V;f= 1.0MHz
IE= 0.5A ; VCE= -12V
MIN TYP. MAX UNIT
-230
V
-0.5 V
-10 μ A
-10 μ A
50 180
450 pF
20 MHz
hFE Classifications
OPY
50-100 70-140 90-180
isc websitewww.iscsemi.cn
2 isc&iscsemi is registered trademark