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BZX85C
Silicon Planar Power Zener Diodes
for use in stabilizing and clipping circuits with high
power rating.
The Zener voltages are graded according to the
international E 24 standard. Other tolerances and
higher Zener voltages are upon request.
Max. 0.7
Max. 2.8
Min. 25.4
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 4.2
Min. 25.4
Glass Case DO-41
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Power Dissipation
Ptot 1.3 1)
Junction Temperature
Tj 200
Storage Temperature Range
Tstg - 55 to + 200
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Unit
W
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Thermal Resistance Junction to Ambient Air
RthA
130 1)
Forward Voltage
at IF = 200 mA
VF 1.2
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Unit
K/W
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/09/2009

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BZX85C
Characteristics at Ta = 25 OC
Zener Voltage 1)
Type
VZnom
(V)
VZT
(V)
BZX85C2V7 2.7 2.5...2.9
BZX85C3V0 3 2.8...3.2
BZX85C3V3 3.3 3.1...3.5
BZX85C3V6 3.6 3.4...3.8
BZX85C3V9 3.9 3.7...4.1
BZX85C4V3
4.3
4...4.6
BZX85C4V7
4.7
4.4...5
BZX85C5V1 5.1 4.8...5.4
BZX85C5V6
5.6
5.2...6
BZX85C6V2 6.2 5.8...6.6
BZX85C6V8 6.8 6.4...7.2
BZX85C7V5
7.5
7...7.9
BZX85C8V2 8.2 7.7...8.7
BZX85C9V1 9.1 8.5...9.6
BZX85C10
10 9.4...10.6
BZX85C11
11 10.4...11.6
BZX85C12
12 11.4...12.7
BZX85C13
13 12.4...14.1
BZX85C15
15 13.8...15.6
BZX85C16
16 15.3...17.1
BZX85C18
18 16.8...19.1
BZX85C20
20 18.8...21.2
BZX85C22
22 20.8...23.3
BZX85C24
24 22.8...25.6
BZX85C27
27 25.1...28.9
BZX85C30
30 28...32
BZX85C33
33 31...35
BZX85C36
36 34...38
BZX85C39
39 37...41
BZX85C43
43 40...46
BZX85C47
47 44...50
BZX85C51
51 48...54
BZX85C56
56 52...60
BZX85C62
62 58...66
BZX85C68
68 64...72
BZX85C75
75 70...79
1) Tested with pulses tp = 20 ms.
at IZT
(mA)
80
80
70
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
ZZT
Max. ()
20
20
20
15
15
13
13
10
7
4
3.5
3
5
5
7
8
9
10
15
15
20
24
25
25
30
30
35
40
50
50
90
115
120
125
130
135
Dynamic Resistance
at IZT
(mA)
ZZK
Max. ()
80 400
80 400
70 400
60 500
60 500
50 500
45 600
45 500
45 400
35 300
35 300
35 200
25 200
25 200
25 200
20 300
20 350
20 400
15 500
15 500
15 500
10 600
10 600
10 600
8 750
8 1000
8 1000
8 1000
6 1000
6 1000
4 1500
4 1500
4 2000
4 2000
4 2000
4 2000
at IZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse Current
IR
Max. (µA)
at VR
(V)
150 1
100 1
40 1
20 1
10 1
31
31
1 1.5
12
13
14
1 4.5
1 6.2
1 6.8
0.5 7
0.5 8.2
0.5 9.1
0.5 10
0.5 11
0.5 12
0.5 13
0.5 15
0.5 16
0.5 18
0.5 20
0.5 22
0.5 24
0.5 27
0.5 30
0.5 33
0.5 36
0.5 39
0.5 43
0.5 47
0.5 51
0.5 56
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/09/2009

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BZX85C
Breakdown characteristics
at Tj=constant (pulsed)
mA
240
200
Iz
160
120
80
C3V9
C4V7
C5V6
C6V8
C8V2
C10
40
BZX 85...
Tj=25o C
C12
C15
C18
C22
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24V
Vz
Breakdown characteristics
at Tj=constant (pulsed)
mA
50
C27
Iz
Tj=25 oC
40
C33
C39
C47
30
BZX 85...
C68
20
C75
C91
10
0
20 25 30 35 40 45 50
Admissible power dissipation
Versus ambient temperature
Valid provided that leads are kept at ambient
Temperature at a distance of 10 mm from case
w
55 60
65
Vz
70 75
80 85 90 95V
Ptot
Tamb
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/09/2009