B536.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B536 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Complement to type 2SD381
·Low collector saturation voltage
APPLICATIONS
·Audio frequency power amplifier
·Low speed power switching
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SB536
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-130
-120
-5
-1.5
-3.0
-0.3
1.5
20
150
-50~150
UNIT
V
V
V
A
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB536
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
ICBO Collector cut-off current
VCB=-120V; IE=0
-120
V
-2.0 V
-1.5 V
-1.0 µA
IEBO Emitter cut-off current
VEB=-3V; IC=0
-1.0 µA
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
25
hFE-2
DC current gain
IC=-0.3A ; VCE=-5V
40 250
COB Output capacitance
fT Transition frequency
IE=0 ; VCB=-10V; f=1MHz
IC=-0.1A ; VCE=-5V
35 pF
40 MHz
hFE-2 Classifications
NML
K
40-80 60-120 80-160 120-250
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB536
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3