3DD15.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 3DD15 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD15
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=7550
W
TJ Junction Temperature
175
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
isc websitewww.iscsemi.cn
1

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD15
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO Collector Cutoff Current
VCE= 50V; IB=0
ICBO Collector Cutoff Current
VCB= 50V; IE=0
hFE DC Current Gain
IC= 2A; VCE= 10V
tf Fall Time
IC= 3A; IB1= 0.2A, IB2= -0.3A,
MIN MAX UNIT
100 V
150 V
5V
1.5 V
1.0 mA
0.5 mA
120 180
1.0 μs
isc websitewww.iscsemi.cn
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