3DD7B.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 3DD7B 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75
TJ Junction Temperature
Tstg Storage Temperature Range
7.5 A
75 W
175
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.33 /W
isc websitewww.iscsemi.cn
1

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7B
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A
ICEO Collector Cutoff Current
VCE= 30V; IB= 0
hFE DC Current Gain
IC= 3.75A; VCE= 10V
MIN TYP. MAX UNIT
100 V
5V
150 V
1.2 V
1.0 mA
15 180
isc websitewww.iscsemi.cn
2