3DD8D.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 3DD8D 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD8D
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
110 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75
TJ Junction Temperature
Tstg Storage Temperature Range
15 A
100 W
175
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 /W
isc websitewww.iscsemi.cn
1

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD8D
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO Collector Cutoff Current
VCE= 20V; IB= 0
hFE DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT
110 V
5V
110 V
2.0 V
2.0 mA
10
isc websitewww.iscsemi.cn
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