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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 750(Min)@ IC= -1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A;
-100V(Min)- BDT60B; -120V(Min)- BDT60C
·Complement to Type BDT61/A/B/C
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT60
-60
VCBO
Collector-Base
Voltage
BDT60A
BDT60B
-80
-100
V
BDT60C
-120
BDT60
-60
VCEO
Collector-Emitter
Voltage
BDT60A
BDT60B
-80
-100
V
BDT60C
-120
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current
Collector Power Dissipation
PC
Ta=25
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Ttemperature Range
-0.1
2
50
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2.5
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT60
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT60A
BDT60B
IC= -30mA; IB= 0
BDT60C
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDT60
Collector
Cutoff Current
BDT60A
BDT60B
BDT60C
BDT60
IC= -1.5A ; VCE= -3V
VCB= -60V; IE= 0
VCB= -30V; IE= 0; TJ=150
VCB= -80V; IE= 0
VCB= -40V; IE= 0; TJ=150
VCB= -100V; IE= 0
VCB= -50V; IE= 0; TJ=150
VCB= -120V; IE= 0
VCB= -60V; IE= 0; TJ=150
VCE= -30V; IB= 0
ICEO
Collector
Cutoff Current
BDT60A VCE= -40V; IB= 0
BDT60B VCE= -50V; IB= 0
BDT60C VCE= -60V; IB= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
VECF
DC Current Gain
C-E Diode Forward Voltage
IC= -1.5A; VCE= -3V
IE= -1.5A
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= -2A; IB1= -IB2= -8mA;
VBE(off)= 5V; RL= 20Ω
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-2.5 V
-2.5 V
-0.2
-2.0
-0.2
-2.0
mA
-0.2
-2.0
-0.2
-2.0
-0.5
-0.5
mA
-0.5
-0.5
-5 mA
750
-2.0 V
1.0 μs
4.5 μs
isc websitewww.iscsemi.cn
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