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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK445-800A/B
DESCRIPTION
·2A, 800V
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
Majority Carrier Device
Related Literature
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
Drain
Current-continuous
@ TC=37
BUK446-800A
BUK446-800B
Total Dissipation@TC=25
Max. Operating Junction Temperature
Storage Temperature Range
800
±30
2.0
1.7
30
150
150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.16 /W
55 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUK445-800A/B
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH)
RDS(ON)
IGSS
Gate Threshold Voltage
VDS= VGS; ID= 1mA
Drain-Source On-stage Resistance
VGS= 10V; BUK446-800A
ID= 1.5A BUK446-800B
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0
VSD Diode Forward Voltage
IF=2.0A; VGS= 0
MIN MAX UNIT
800 V
2.1 4
V
3Ω
4
±100 nA
2 uA
1.3 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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