BUK452-100B.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 BUK452-100B 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK452-100A/B
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
Drain
BUK452-100A
Current-continuou
s@ TC=37
BUK452-100B
Total Dissipation@TC=25
Max. Operating Junction Temperature
Storage Temperature Range
100
±30
11
10
60
175
175
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
2.5 /W
60 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUK452-100A/B
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH)
RDS(ON)
IGSS
Gate Threshold Voltage
VDS= VGS; ID= 1mA
Drain-Source On-stage Resistance
VGS= 10V; BUK452-100A
ID= 5.5A BUK452-100B
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 100V;VGS= 0
VSD Diode Forward Voltage
IF= 11A;VGS= 0
MIN MAX UNIT
100 V
2.1 4
V
0.25 Ω
0.3
±100 nA
10 uA
1.5 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn